In a recent paper Ong and Chan (see ibid., vol.1, p.3931 (1989)) examined seven different asymmetric dimer reconstructions for a Si(100) surface using the CNDO (complete neglect of differential overlap) method. The p(4*1) and c(4*2) reconstructions were found to be energetically more favourable, followed by p(2*2) and (2*1). Zandvliet comments only on the results of the four members of the (2*1) family, since experimentally the other asymmetric dimer reconstructions are not observed on the Si(100) and the Ge(100) surfaces
Ge deposited on Si(100) initially forms heteroepitaxial layers, which grow to a critical thickness o...
Ge deposited on Si(100) initially forms heteroepitaxial layers, which grow to a critical thickness o...
The stable structure of clean Si(0 0 1) surface around 100 K is the c(4 · 2) arrangement con-structe...
In a recent paper Ong and Chan (see ibid., vol.1, p.3931 (1989)) examined seven different asymmetric...
In experiments the reconstructed Si(100) surface shows silicon dimers pointing along the [011] direc...
We present the results of a systematic study of the reconstruction of the Si(100) surface based upon...
We present a theoretical study of the effects of the STM tip on the geometry of Si(100) reconstructe...
Surface x-ray diffraction investigations of the indium-induced Si(001)−(4×3) reconstruction show tha...
The effect of the 2×1 reconstruction on the core-electron binding energies of the outermost Si(100)...
The effect of the 2×1 reconstruction on the core-electron binding energies of the outermost Si(100)...
The effect of the 2×1 reconstruction on the core-electron binding energies of the outermost Si(100)...
We have determined the atomic structure of the Ge-covered Si(100) surface in one-monolayer coverage ...
We find that the P(2 x 1) reconstruction is stable with respect to C(2 x 2). The origin of this eff...
We present a theoretical study of the influence of germanium ad-dimers on carbon incorporation in th...
In a recent paper, Sobotík and Ošt’ádal report scanning tunneling microscopy/spectroscopy (STM/STS) ...
Ge deposited on Si(100) initially forms heteroepitaxial layers, which grow to a critical thickness o...
Ge deposited on Si(100) initially forms heteroepitaxial layers, which grow to a critical thickness o...
The stable structure of clean Si(0 0 1) surface around 100 K is the c(4 · 2) arrangement con-structe...
In a recent paper Ong and Chan (see ibid., vol.1, p.3931 (1989)) examined seven different asymmetric...
In experiments the reconstructed Si(100) surface shows silicon dimers pointing along the [011] direc...
We present the results of a systematic study of the reconstruction of the Si(100) surface based upon...
We present a theoretical study of the effects of the STM tip on the geometry of Si(100) reconstructe...
Surface x-ray diffraction investigations of the indium-induced Si(001)−(4×3) reconstruction show tha...
The effect of the 2×1 reconstruction on the core-electron binding energies of the outermost Si(100)...
The effect of the 2×1 reconstruction on the core-electron binding energies of the outermost Si(100)...
The effect of the 2×1 reconstruction on the core-electron binding energies of the outermost Si(100)...
We have determined the atomic structure of the Ge-covered Si(100) surface in one-monolayer coverage ...
We find that the P(2 x 1) reconstruction is stable with respect to C(2 x 2). The origin of this eff...
We present a theoretical study of the influence of germanium ad-dimers on carbon incorporation in th...
In a recent paper, Sobotík and Ošt’ádal report scanning tunneling microscopy/spectroscopy (STM/STS) ...
Ge deposited on Si(100) initially forms heteroepitaxial layers, which grow to a critical thickness o...
Ge deposited on Si(100) initially forms heteroepitaxial layers, which grow to a critical thickness o...
The stable structure of clean Si(0 0 1) surface around 100 K is the c(4 · 2) arrangement con-structe...