This paper describes a study concerning the interaction of oxygen with clean Ge(001)2 × 1 surfaces in ultrahigh vacuum at 300 K. Surface conductance measurements, differential ellipsometry in the photon energy range of 1.5–4 eV and Auger electron spectroscopy have been used to monitor this solid-gas reaction. We observed in the joint density of states, as derived from ellipsometry, a peak at about 3.3 eV in addition to the optical transition at 1.8 eV reported earlier by Meyer. From the optical spectrum we show that the clean Ge(001) surface has at least three distinct surface states. Our results are essentially consistent with recent STM measurements and theoretical predictions. Moreover, we show that the distinct feature at 2.6 eV below t...
The optical absorption due to surface states on ultrahigh vacuum cleaved Ge and Si surfaces has been...
Although germanium (Ge) (0 0 1) has a relatively small surface unit cell, this surface displays a we...
Valence band photoemission has been carried out on Ge(100) from below room temperature to 1173 K. Th...
Surface states on Ge(111)c(2X8) are detected using ellipsometry, field effect and surface conductivi...
The surface induced optical anisotropy in the electronic structure of clean Ge(001)2 × 1 was studied...
The optical, electrical, and chemical properties of semiconductor surfaces are largely determined by...
Variable temperature photoemission studies in the literature have revealed the presence of a surface...
This Communication describes a study concerning the interaction of molecular oxygen with a clean Ge(...
The unoccupied electronic band structure of the Ge(001)2 × 1 surface along the \̄gGJ̄J̄' line of the...
We have measured the change in the optical reflection anisotropy of a clean Ge(001) surface upon exp...
Optical absorption of a cleaved surface of germanium shows a band at energies smaller than the gap, ...
There is currently considerable interest in processes associated with the modification of germanium ...
Applying in-situ combination of angle-resolved photoemission and inverse photoemission spectroscopy ...
We present the result of a combined ab initio theoretical study and ultraviolet photoemission spectr...
The 3d surface core-level shifts of the clean Ge(100)(2 71) surface have been investigated at 300 K ...
The optical absorption due to surface states on ultrahigh vacuum cleaved Ge and Si surfaces has been...
Although germanium (Ge) (0 0 1) has a relatively small surface unit cell, this surface displays a we...
Valence band photoemission has been carried out on Ge(100) from below room temperature to 1173 K. Th...
Surface states on Ge(111)c(2X8) are detected using ellipsometry, field effect and surface conductivi...
The surface induced optical anisotropy in the electronic structure of clean Ge(001)2 × 1 was studied...
The optical, electrical, and chemical properties of semiconductor surfaces are largely determined by...
Variable temperature photoemission studies in the literature have revealed the presence of a surface...
This Communication describes a study concerning the interaction of molecular oxygen with a clean Ge(...
The unoccupied electronic band structure of the Ge(001)2 × 1 surface along the \̄gGJ̄J̄' line of the...
We have measured the change in the optical reflection anisotropy of a clean Ge(001) surface upon exp...
Optical absorption of a cleaved surface of germanium shows a band at energies smaller than the gap, ...
There is currently considerable interest in processes associated with the modification of germanium ...
Applying in-situ combination of angle-resolved photoemission and inverse photoemission spectroscopy ...
We present the result of a combined ab initio theoretical study and ultraviolet photoemission spectr...
The 3d surface core-level shifts of the clean Ge(100)(2 71) surface have been investigated at 300 K ...
The optical absorption due to surface states on ultrahigh vacuum cleaved Ge and Si surfaces has been...
Although germanium (Ge) (0 0 1) has a relatively small surface unit cell, this surface displays a we...
Valence band photoemission has been carried out on Ge(100) from below room temperature to 1173 K. Th...