Silicon oxide nanoimprint stamp fabrication by edge lithography reinforced with silicon nitride

The fabrication of silicon oxide nanoimprint stamp employing edge lithography in combination with silicon nitride deposition is presented. The fabrication process is based on conventional photolithography an weg etching methods. Nanoridges with width dimension of sub-20 nm were fabricated by edge lithography. Additional silicon rich nitride layer was deposited over the original silicon dioxide nanoridges to improve the ridge stiffness and to achieve a positive tapered shape which is friendly to rich mitride shield was obtained by imprint in PMMA