Abstract Single pole double throw (SPDT) switches are becoming more and more key components in phased-array radar transmit/receive modules. An SPDT switch must be able to handle the output power of a high power amplifier and must provide enough isolation to protect the low noise amplifier in the receive chain when the T/R module is transmitting. Therefore gallium nitride technology seems to become a key technology for high power SPDT switch design. The technology shows good performance on microwave frequencies and is able to handle high power. An X-band SPDT switch, with a linear power handling of over 25 W, has been designed, measured and evaluated. The circuit is designed in the coplanar waveguide AlGaN/GaN technology established at Qinet...
Abstract Gallium-Nitride technology is known for its high power density and power amplifier designs,...
An asymmetrical switch architecture suitable for transmit/receive modules is proposed in this contri...
Large communication bandwidths over long distances are desired for both military and commercial appl...
Single Pole Double Throw (SPDT) switches are becoming more and more key components in phased-array r...
In this article, the design, fabrication, and on-wafer test of X-Band and 2-18 GHz wideband high-pow...
This article presents a new GaN HEMT-based high-power single-pole double-throw (SPDT) switch operati...
In this paper the design, fabrication and test of XBand and 2-18GHz wideband high power SPDT MMIC sw...
The design, fabrication and test of X-band high-power monolithic SPDT switches in microstrip GaN tec...
In this paper, the design, analysis, and performance of four millimeter-wave SPDT switch MMICs are p...
Apart from delivering very high output powers, GaN can also be used to realize robust receiver compo...
This paper reports on W-band (75 to 110 GHz) single-pole double-throw (SPDT) switch millimeter-wave ...
This paper describes X-Band power amplifier (PA), low noise amplifier (LNA) and switches that can be...
Abstract Gallium-Nitride technology is known for its high power density and power amplifier designs,...
An asymmetrical switch architecture suitable for transmit/receive modules is proposed in this contri...
Large communication bandwidths over long distances are desired for both military and commercial appl...
Single Pole Double Throw (SPDT) switches are becoming more and more key components in phased-array r...
In this article, the design, fabrication, and on-wafer test of X-Band and 2-18 GHz wideband high-pow...
This article presents a new GaN HEMT-based high-power single-pole double-throw (SPDT) switch operati...
In this paper the design, fabrication and test of XBand and 2-18GHz wideband high power SPDT MMIC sw...
The design, fabrication and test of X-band high-power monolithic SPDT switches in microstrip GaN tec...
In this paper, the design, analysis, and performance of four millimeter-wave SPDT switch MMICs are p...
Apart from delivering very high output powers, GaN can also be used to realize robust receiver compo...
This paper reports on W-band (75 to 110 GHz) single-pole double-throw (SPDT) switch millimeter-wave ...
This paper describes X-Band power amplifier (PA), low noise amplifier (LNA) and switches that can be...
Abstract Gallium-Nitride technology is known for its high power density and power amplifier designs,...
An asymmetrical switch architecture suitable for transmit/receive modules is proposed in this contri...
Large communication bandwidths over long distances are desired for both military and commercial appl...