Add to ORKGKnowledge of contact resistance of phase change materials (PCM) to metal electrodes is important for scaling, device modeling and optimization of phase change random access memory (PCRAM) cells. In this article, we report the systematic determination of the speci_c contact resistance (_c) with voltage bias for doped Sb2Te to TiW metal electrodes. These data are reported for both the amorphous and the crystalline state of the PCM
Nanowire (NW) structures offer a model system for investigating material and scaling properties of p...
Multilevel programming in phase change memories (PCMs) requires understanding of the phenomena which...
As semiconductor devices continue to scale downward, and portable consumer electronics become more p...
For phase change random access memory (PCRAM) cells, it is important to know the contact resistance ...
Electrical characterisation of metal to Phase Change Material (PCM) contacts is necessary for optimu...
We have investigated the interfacial contact properties of the CMOS compatible electrode materials W...
Advancements in integrated circuits demand an increasing requirement for a faster, low-cost non-vola...
With respect to the operation of a Phase-change Random Access Memory (PRAM or PcRAM), we studied the...
Phase change materials (PCM) based memory device is considered as one of the most promising candidat...
We have investigated the contact resistivity of GeCu2Te3 (GCT) phase change material to a W electrod...
Ge2Sb2Te5 (GST) phase change nanowires have been fabricated using a top-down spacer etch process. Th...
This paper investigates the impact of contact resistance on the memory window in phase-change random...
Phase change memory (PCM) is one of the most promising non-volatile memory technologies in the marke...
The realization of low resistivity and stable contacts on p-type CdTe is still challenging, especial...
The authors report a systematic study of the bias-dependent contact resistance in rubrene single-cry...
Nanowire (NW) structures offer a model system for investigating material and scaling properties of p...
Multilevel programming in phase change memories (PCMs) requires understanding of the phenomena which...
As semiconductor devices continue to scale downward, and portable consumer electronics become more p...
For phase change random access memory (PCRAM) cells, it is important to know the contact resistance ...
Electrical characterisation of metal to Phase Change Material (PCM) contacts is necessary for optimu...
We have investigated the interfacial contact properties of the CMOS compatible electrode materials W...
Advancements in integrated circuits demand an increasing requirement for a faster, low-cost non-vola...
With respect to the operation of a Phase-change Random Access Memory (PRAM or PcRAM), we studied the...
Phase change materials (PCM) based memory device is considered as one of the most promising candidat...
We have investigated the contact resistivity of GeCu2Te3 (GCT) phase change material to a W electrod...
Ge2Sb2Te5 (GST) phase change nanowires have been fabricated using a top-down spacer etch process. Th...
This paper investigates the impact of contact resistance on the memory window in phase-change random...
Phase change memory (PCM) is one of the most promising non-volatile memory technologies in the marke...
The realization of low resistivity and stable contacts on p-type CdTe is still challenging, especial...
The authors report a systematic study of the bias-dependent contact resistance in rubrene single-cry...
Nanowire (NW) structures offer a model system for investigating material and scaling properties of p...
Multilevel programming in phase change memories (PCMs) requires understanding of the phenomena which...
As semiconductor devices continue to scale downward, and portable consumer electronics become more p...