This paper introduces large signal excitation measurement techniques to analyze Random Telegraph Signal (RTS) noise originating from oxide-traps in MOSFETs. The paper concentrates on the trap-occupancy, which relates directly to the generated noise. The proposed measurement technique makes trap-occupancy observation possible for every bias-situation, including the OFF-state of the transistor
The principles and application of Generation-Recombination (GR) noise spectroscopy will be outlined ...
The behavior of RTS noise in MOSFETs under large-signal excitation is experimentally studied. Our me...
The Random Telegraph Noise (RTN) in an advanced Metal-Oxide-Semiconductor Field-Effect Transistor (M...
In the study of LF noise in MOSFETS, it has become clear that Random Telegraph Signals (RTS) are dom...
Abstract — In the study of LF noise in MOSFETS, it has become clear that Random Telegraph Signals (R...
We have found a systematic way to identify the bias conditions to observe the Random-Telegraph-Noise...
It is difficult to measure the random telegraph noises (RTN) of MOSFET subthreshold currents at the ...
Low frequency noise was measured in silicon MOSFET and GaN and InGaAs based HFET devices with specia...
Random telegraph signal (RTS) noise has shown an increased impact on circuit performance at advanced...
International audienceA characterization of traps in ultrathin-oxide MOSFETs by low frequency noise ...
In this work, we study random telegraph signal (RTS) noise in metal-oxide-semiconductor field effect...
In this paper, we present measurements and simulation of random telegraph signal (RTS) noise in n-ch...
In this paper, we present measurements and simulation of random telegraph signal (RTS) noise in n-ch...
Low-frequency noise in small-area MOSFETs is dominated by random telegraph signal noise associated t...
In this paper, the anomalously large random telegraph signal (RTS) noise amplitudes in tunneling fie...
The principles and application of Generation-Recombination (GR) noise spectroscopy will be outlined ...
The behavior of RTS noise in MOSFETs under large-signal excitation is experimentally studied. Our me...
The Random Telegraph Noise (RTN) in an advanced Metal-Oxide-Semiconductor Field-Effect Transistor (M...
In the study of LF noise in MOSFETS, it has become clear that Random Telegraph Signals (RTS) are dom...
Abstract — In the study of LF noise in MOSFETS, it has become clear that Random Telegraph Signals (R...
We have found a systematic way to identify the bias conditions to observe the Random-Telegraph-Noise...
It is difficult to measure the random telegraph noises (RTN) of MOSFET subthreshold currents at the ...
Low frequency noise was measured in silicon MOSFET and GaN and InGaAs based HFET devices with specia...
Random telegraph signal (RTS) noise has shown an increased impact on circuit performance at advanced...
International audienceA characterization of traps in ultrathin-oxide MOSFETs by low frequency noise ...
In this work, we study random telegraph signal (RTS) noise in metal-oxide-semiconductor field effect...
In this paper, we present measurements and simulation of random telegraph signal (RTS) noise in n-ch...
In this paper, we present measurements and simulation of random telegraph signal (RTS) noise in n-ch...
Low-frequency noise in small-area MOSFETs is dominated by random telegraph signal noise associated t...
In this paper, the anomalously large random telegraph signal (RTS) noise amplitudes in tunneling fie...
The principles and application of Generation-Recombination (GR) noise spectroscopy will be outlined ...
The behavior of RTS noise in MOSFETs under large-signal excitation is experimentally studied. Our me...
The Random Telegraph Noise (RTN) in an advanced Metal-Oxide-Semiconductor Field-Effect Transistor (M...