A Comparitive Analysis of Improved 6t Sram Cell With Different Sram Cell

High speed and low power consumption have been the primary issue to design Static Random Access Memory\ud (SRAM), but we are facing new challenges with the scaling of technology. The stability and speed of SRAM are\ud important issues to improve efficiency and performance of the system. Stability of the SRAM depends on the\ud static noise margin (SNM) so the noise margin is also important parameter for the design of memory because\ud the higher noise margin confirms the high speed of the SRAM cell. In this paper, the improved 6T SRAM cell\ud shows maximum reduction in power consumption of 88%, maximum reduction in delay of 64% and maximum\ud SNM of 17% increases compared with 7T SRAM cell