Implantación iónica

This paper reviews the different techniques of ion implantation is presented from the implanter ion beam, used in the manufacture of semiconductors, through a series of developments based on the technology of plasma physics, to reach the Ion Implantation technique called three-dimensional (3DII). For each ion implantation techniques most common devices are presented and their main characteristics are analyzed. In the case of ion implantation Dimensional equipment JUPITER (Joint Universal Plasma and Ion Technologies Experimental Reactor), unique in the world for research downloads pulsed high voltage at low pressures and for surface treatment of materials described. This device was implemented in the Laboratory of Plasma Physics and corrosion of the Industrial University of Santander, with the financial support of COLCIENCIAS and with the cooperation of Bauman State Technical University in Moscow