The reliability of Very Large Scale Integration (VLSI) circuits has become increasingly susceptible to transient faults induced by environmental noise with the scaling of technology. Some commonly used fault tolerance strategies require statistical methods to accurately estimate the fault rate in different parts of the logic circuit, and Monte Carlo (MC) simulation is often applied to complete this task. However, the MC method suffers from impractical computation costs due to the size of the circuits. Furthermore, circuit aging effects, such as negative bias temperature instability (NBTI), will change the characteristics of the circuit during its lifetime, leading to a change in the circuit’s noise margin. This change will increase the comp...
71 p.Thesis (Ph.D.)--University of Illinois at Urbana-Champaign, 1993.Estimating the power dissipate...
As CMOS scaling moves towards the end of technology road map, a plethora of reliability issues are e...
As we enter into sub-nanometer technologies in order to increase performance of CMOS devices, reliab...
The reliability of Very Large Scale Integration (VLSI) circuits has become increasingly susceptible ...
Static statistical variability and time-dependent reliability are traditionally analyzed separately....
Abstract: Negative Bias Temperature Instability (NBTI) is identified as one of the most critical rel...
This paper discusses an efficient method to analyze the spatial and temporal reliability of analog a...
Abstract—Negative bias temperature instability (NBTI) has become a major factor determining circuit ...
As the CMOS technology scales down towards nanoscale dimensions, there are increasing transistor rel...
Device scaling, the driving force of CMOS technology, led to continuous decrease in the energy level...
We propose a circuit-level modeling approach for the threshold voltage shift in PMOS devices due to ...
Abstract – This paper evaluates the severity of negative bias temperature instability (NBTI) degrada...
This thesis presents a new technique for simulating integrated circuits, called probabilistic simula...
As technology further scales semiconductor devices, aging-induced device degradation has become one ...
A compact negative bias temperature instability (NBTI) model is presented by iteratively solving the...
71 p.Thesis (Ph.D.)--University of Illinois at Urbana-Champaign, 1993.Estimating the power dissipate...
As CMOS scaling moves towards the end of technology road map, a plethora of reliability issues are e...
As we enter into sub-nanometer technologies in order to increase performance of CMOS devices, reliab...
The reliability of Very Large Scale Integration (VLSI) circuits has become increasingly susceptible ...
Static statistical variability and time-dependent reliability are traditionally analyzed separately....
Abstract: Negative Bias Temperature Instability (NBTI) is identified as one of the most critical rel...
This paper discusses an efficient method to analyze the spatial and temporal reliability of analog a...
Abstract—Negative bias temperature instability (NBTI) has become a major factor determining circuit ...
As the CMOS technology scales down towards nanoscale dimensions, there are increasing transistor rel...
Device scaling, the driving force of CMOS technology, led to continuous decrease in the energy level...
We propose a circuit-level modeling approach for the threshold voltage shift in PMOS devices due to ...
Abstract – This paper evaluates the severity of negative bias temperature instability (NBTI) degrada...
This thesis presents a new technique for simulating integrated circuits, called probabilistic simula...
As technology further scales semiconductor devices, aging-induced device degradation has become one ...
A compact negative bias temperature instability (NBTI) model is presented by iteratively solving the...
71 p.Thesis (Ph.D.)--University of Illinois at Urbana-Champaign, 1993.Estimating the power dissipate...
As CMOS scaling moves towards the end of technology road map, a plethora of reliability issues are e...
As we enter into sub-nanometer technologies in order to increase performance of CMOS devices, reliab...