We theoretically study the electronic structure and spin splitting of a strained GaAs(001) surface with broken twofold symmetry. We introduce a surface electron Hamiltonian of our model. By k·p theory, we qualitatively evaluate the electronic structure of GaAs(001) surface, demonstrating that the spin degeneracy of the bottom of the surface-state conduction bands is split. Additionally, by the spin current operator, we evaluate the spin current of electrons in the bottom of the surface-state conduction bands, demonstrating that for n-type GaAs the spin current flows in the parallel direction to a mirror plane spontaneously. This is a new mechanism to generate the spin current
We have studied the temperature dependence of the spin-flip processes of electrons in p-type mod-ula...
The spin-galvanic effect and the circular photogalvanic effect induced by terahertz radiation are ap...
We report quantitative experimental and theoretical results revealing the tunability of spin splitti...
AbstractWe theoretically study the electronic structure and spin splitting of a strained GaAs(001) s...
We present a theory for two recent experiments in bulk strained semiconductors and show that a new, ...
In photoemission of spin-polarized electrons from GaAs-surfaces with negative electron affinity (whe...
We calculate evanescent waves in GaAs throughout the forbidden band gap, taking into account both th...
We describe a model as well as experiments on spin-polarized tunneling with the aid of optical spin ...
Two aspects related to valence-band hole spin are considered: spin surfaces in p-type semiconductors...
Within the band gap of a semiconductor no electronic propagating states are allowed, but there exist...
The momentum-dependent spin splitting in the conduction band couples orbital motion to spin and enab...
Within the band gap of a semiconductor no electronic propagating states are allowed, but there exist...
We have studied the temperature dependence of the spin-flip processes of electrons in p-type mod-ula...
The spin-galvanic effect and the circular photogalvanic effect induced by terahertz radiation are ap...
We report quantitative experimental and theoretical results revealing the tunability of spin splitti...
AbstractWe theoretically study the electronic structure and spin splitting of a strained GaAs(001) s...
We present a theory for two recent experiments in bulk strained semiconductors and show that a new, ...
In photoemission of spin-polarized electrons from GaAs-surfaces with negative electron affinity (whe...
We calculate evanescent waves in GaAs throughout the forbidden band gap, taking into account both th...
We describe a model as well as experiments on spin-polarized tunneling with the aid of optical spin ...
Two aspects related to valence-band hole spin are considered: spin surfaces in p-type semiconductors...
Within the band gap of a semiconductor no electronic propagating states are allowed, but there exist...
The momentum-dependent spin splitting in the conduction band couples orbital motion to spin and enab...
Within the band gap of a semiconductor no electronic propagating states are allowed, but there exist...
We have studied the temperature dependence of the spin-flip processes of electrons in p-type mod-ula...
The spin-galvanic effect and the circular photogalvanic effect induced by terahertz radiation are ap...
We report quantitative experimental and theoretical results revealing the tunability of spin splitti...