AbstractCurrent–voltage (I–V) characteristics together with spectral quantum efficiency (QE) measurements are performed on a GaAs control and GaInNAs/GaAs multi‐quantum well (MQW) solar cell under illumination with the AM1.5G spectrum. Nitrogen and Indium composition in the GaInNAs wells were selected as to ensure lattice matching to GaAs. The wells are shown to extend the spectral response to longer wavelengths but also cause a reduction in the QE at wavelengths below the GaAs band gap. Furthermore, the addition of wells generally causes a large decrease in open circuit voltage due to the increased dark current. The MQW cell reaches an efficiency of 5% compared to 8.5% for the GaAs control cell.</jats:p
Two window layer materials, Al0.51In0.49P (Eg = 2.3 eV) and Ga0.51In0.49P (Eg = 1.88 eV) were compar...
Lattice-mismatched Ga1-xInxAs solar cells with an absorption edge between 900 and 1150 nm have been ...
In this work, the authors present the results of optical characterization of GaAs-based multiple qua...
AbstractCurrent–voltage (I–V) characteristics together with spectral quantum efficiency (QE) measure...
International audienceIn order to improve the solar cell efficiency, quantum multi-wells have been i...
Some years ago Multiple Quantum Wells (MQW) solar cells were introduced as an alternative to obtain ...
We examine the possibility of using gallium arsenide (GaAs) quantum wells, which have significantly ...
We have investigated the optical transitions in Ga1-yInyNxAs1-x/GaAs single and multiple quantum wel...
The optical absorption of a p-i-n solar cell may be increased by incorporating quantum well layers i...
Multi Quantum Well Solar Cell is an advanced improvement of the conventional solar cell to overcome ...
Several GaAs strain-balanced quantum well solar cells with different well composition and well numbe...
International audienceHigh efficiency quantum well GaAs solar cells have been successfully applied i...
This paper presents results of numerical simulations of GaAs solar cells with quantum wells (QWs) in...
This paper deals with a AlGaAs/GaAs p-i-n quantum well solar cell. The doped region are based on AlG...
Three- and four-junction III-V devices are proposed for ultrahigh-efficiency solar cells using a new...
Two window layer materials, Al0.51In0.49P (Eg = 2.3 eV) and Ga0.51In0.49P (Eg = 1.88 eV) were compar...
Lattice-mismatched Ga1-xInxAs solar cells with an absorption edge between 900 and 1150 nm have been ...
In this work, the authors present the results of optical characterization of GaAs-based multiple qua...
AbstractCurrent–voltage (I–V) characteristics together with spectral quantum efficiency (QE) measure...
International audienceIn order to improve the solar cell efficiency, quantum multi-wells have been i...
Some years ago Multiple Quantum Wells (MQW) solar cells were introduced as an alternative to obtain ...
We examine the possibility of using gallium arsenide (GaAs) quantum wells, which have significantly ...
We have investigated the optical transitions in Ga1-yInyNxAs1-x/GaAs single and multiple quantum wel...
The optical absorption of a p-i-n solar cell may be increased by incorporating quantum well layers i...
Multi Quantum Well Solar Cell is an advanced improvement of the conventional solar cell to overcome ...
Several GaAs strain-balanced quantum well solar cells with different well composition and well numbe...
International audienceHigh efficiency quantum well GaAs solar cells have been successfully applied i...
This paper presents results of numerical simulations of GaAs solar cells with quantum wells (QWs) in...
This paper deals with a AlGaAs/GaAs p-i-n quantum well solar cell. The doped region are based on AlG...
Three- and four-junction III-V devices are proposed for ultrahigh-efficiency solar cells using a new...
Two window layer materials, Al0.51In0.49P (Eg = 2.3 eV) and Ga0.51In0.49P (Eg = 1.88 eV) were compar...
Lattice-mismatched Ga1-xInxAs solar cells with an absorption edge between 900 and 1150 nm have been ...
In this work, the authors present the results of optical characterization of GaAs-based multiple qua...