Evaluation of an Equivalent Hole Effective Mass for Si/SiGe Structures

We have studied the carrier profile and calculated a unique effective mass for a two-dimensional hole gas confined in a SiO2/Si/Si1_xGex/Si structure when an external voltage is applied. For this purpose, we have solved the system of differential equations provided by the 6 x 6 Luttinger Hamiltonian [1] simultaneously with the Poisson equation, applying an iterative process until convergence was achieved. This enabled us to incorporate the warping and the strong coupling among the subbands that constitute the band structure [2]