Much of the potential of SiGe for p-MOSFET application is reduced by the lower than expected hole mobilities which are likely to be lowered by interface roughness scattering. The present paper analyses a hitherto unrecognised enhancement of interface scattering and trapping process which arises from the complex hole dynamics in the warped heavy hole band
We present results of a numerical formalism developed to address the band structure and charge contr...
The semiconductor industry’s relentless effort to extract enhanced performance from MOS transistors ...
Monte Carlo simulations have been carried out to investigate factors which influence hole transport...
A physical model describing the scattering behavior of holes in the channel of SiGe MOSFET due to in...
In this brief, a physical model describing the scattering of holes in the channel of SiGe p-MOSFET c...
The 4 K Hall mobility has been measured in a top-gated, inverted, modulation-doped Si/Si0.8Ge0.2 str...
A physical model for mobility degradation by interface-roughness scattering and Coulomb scattering i...
Interface roughness strongly influences the performance of germanium metal-organic-semiconductor fie...
The energy levels of interface states generated in n-MOSFETs during hot-carrier stressings under max...
An analytical geometric model for the valence band in strained and relaxed Si1-xGex is presented, wh...
As silicon based metal-oxide-semiconductor field-effect transistors (MOSFETs) are reaching the limit...
In this work we will apply a novel extraction procedure to characterize interfacial states and borde...
We report a theoretical study of the hole density and the low-field mobility in modulation p-doped r...
The nature and composition of generated interface-trap (ΔNIT) in p-MOSFETs is studied as a function ...
The nature and composition of generated interfacetrap (ΔN<sub> IT</sub>) in p-MOSFETs is studie...
We present results of a numerical formalism developed to address the band structure and charge contr...
The semiconductor industry’s relentless effort to extract enhanced performance from MOS transistors ...
Monte Carlo simulations have been carried out to investigate factors which influence hole transport...
A physical model describing the scattering behavior of holes in the channel of SiGe MOSFET due to in...
In this brief, a physical model describing the scattering of holes in the channel of SiGe p-MOSFET c...
The 4 K Hall mobility has been measured in a top-gated, inverted, modulation-doped Si/Si0.8Ge0.2 str...
A physical model for mobility degradation by interface-roughness scattering and Coulomb scattering i...
Interface roughness strongly influences the performance of germanium metal-organic-semiconductor fie...
The energy levels of interface states generated in n-MOSFETs during hot-carrier stressings under max...
An analytical geometric model for the valence band in strained and relaxed Si1-xGex is presented, wh...
As silicon based metal-oxide-semiconductor field-effect transistors (MOSFETs) are reaching the limit...
In this work we will apply a novel extraction procedure to characterize interfacial states and borde...
We report a theoretical study of the hole density and the low-field mobility in modulation p-doped r...
The nature and composition of generated interface-trap (ΔNIT) in p-MOSFETs is studied as a function ...
The nature and composition of generated interfacetrap (ΔN<sub> IT</sub>) in p-MOSFETs is studie...
We present results of a numerical formalism developed to address the band structure and charge contr...
The semiconductor industry’s relentless effort to extract enhanced performance from MOS transistors ...
Monte Carlo simulations have been carried out to investigate factors which influence hole transport...
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