We report the computer-automated tuning of gate-defined semiconductor double quantum dots in GaAs heterostructures. We benchmark the algorithm by creating three double quantum dots inside a linear array of four quantum dots. The algorithm sets the correct gate voltages for all the gates to tune the double quantum dots into the single-electron regime. The algorithm only requires (1) prior knowledge of the gate design and (2) the pinch-off value of the single gate T that is shared by all the quantum dots. This work significantly alleviates the user effort required to tune multiple quantum dot devices. © 2016 Author(s)
Device variability is a bottleneck for the scalability of semiconductor quantum devices. Increasing ...
© 2018 Author(s). The interaction between electrons in arrays of electrostatically defined quantum d...
An electron, in addition to its electric charge, possesses a small magnetic moment, called spin. The...
Semiconductor quantum dot arrays defined electrostatically in a 2D electron gas provide a scalable p...
© 2019, The Author(s). Electrostatically defined quantum dot arrays offer a compelling platform for ...
While spin qubits based on gate-defined quantum dots have demonstrated very favorable properties for...
Building a quantum computer able to solve real-world problems is facing several challenges, both in ...
We present efficient methods to reliably characterize and tune gate-defined semiconductor spin qubit...
Electrostatically defined quantum dot arrays offer a compelling platform for quantum computation and...
Quantum devices with a large number of gate electrodes allow for precise control of device parameter...
Semiconductor quantum dots (QDs) are fascinating systems for potential applications in quantum infor...
Thesis (S.B.)--Massachusetts Institute of Technology, Dept. of Physics, 2005.Includes bibliographica...
Variability is a problem for the scalability of semiconductor quantum devices. The parameter space i...
The potential of Si and SiGe-based devices for the scaling of quantum circuits is tainted by device ...
The potential of Si and SiGe-based devices for the scaling of quantum circuits is tainted by device ...
Device variability is a bottleneck for the scalability of semiconductor quantum devices. Increasing ...
© 2018 Author(s). The interaction between electrons in arrays of electrostatically defined quantum d...
An electron, in addition to its electric charge, possesses a small magnetic moment, called spin. The...
Semiconductor quantum dot arrays defined electrostatically in a 2D electron gas provide a scalable p...
© 2019, The Author(s). Electrostatically defined quantum dot arrays offer a compelling platform for ...
While spin qubits based on gate-defined quantum dots have demonstrated very favorable properties for...
Building a quantum computer able to solve real-world problems is facing several challenges, both in ...
We present efficient methods to reliably characterize and tune gate-defined semiconductor spin qubit...
Electrostatically defined quantum dot arrays offer a compelling platform for quantum computation and...
Quantum devices with a large number of gate electrodes allow for precise control of device parameter...
Semiconductor quantum dots (QDs) are fascinating systems for potential applications in quantum infor...
Thesis (S.B.)--Massachusetts Institute of Technology, Dept. of Physics, 2005.Includes bibliographica...
Variability is a problem for the scalability of semiconductor quantum devices. The parameter space i...
The potential of Si and SiGe-based devices for the scaling of quantum circuits is tainted by device ...
The potential of Si and SiGe-based devices for the scaling of quantum circuits is tainted by device ...
Device variability is a bottleneck for the scalability of semiconductor quantum devices. Increasing ...
© 2018 Author(s). The interaction between electrons in arrays of electrostatically defined quantum d...
An electron, in addition to its electric charge, possesses a small magnetic moment, called spin. The...