This paper studies the effects of the covering layers on the performance of a cross-like Hall plate. Three different structures of a cross-like Hall plate in various sizes are designed and analyzed. The Hall plate sensitivity and offset are characterized using a self-built measurement system. The effect of the P-type region over the active area on the current-related sensitivity is studied for different Hall plate designs. In addition, the correlation between the P-type covering layer and offset is analyzed. The best structure out of three designs is determined. Besides, a modified eight-resistor circuit model for the Hall plate is presented with improved accuracy by taking the offset into account
A purely electronic four-quadrant analog multiplier of wide bandwidth and good accuracy has always b...
Adjacent Hall microsensors, comprising a silicon substrate and four contacts, providing simultaneous...
Four-terminal transducers can be used to measure the magnetic field via the Hall effect or the mecha...
This paper studies the effects of the covering layers on the performance of a cross-like Hall plate....
This work studies the effects of an aluminum covering on the performance of cross-like Hall devices....
This paper analyses sensitivity of Hall devices in the horizontal and vertical forms operating in th...
A detailed analysis of the cross-like Hall cells integrated in regular bulk CMOS technological proce...
This paper presents an analytical model for Hall Plates. The model includes the calculation of some ...
In this paper, the performance of CMOS Hall Effect Sensors with four different geometries has been e...
In this paper, a new single-device three-dimensional (3D) Hall sensor called a cross-shaped 3D Hall ...
The paper presents numerical model and validation of new methodology of offset voltage minimization ...
Several Hall sensor configurations have been integrated in CMOS technology and analyzed in terms of ...
This paper presents a four-folded current-mode vertical Hall device. The current spinning technique ...
This manuscript analyzes the effects of design parameters, such as aspect ratio, doping concentratio...
An integrated Hall sensor was designed and fabricated in a 0.5μm CMOS ONC5N/F process provided by MO...
A purely electronic four-quadrant analog multiplier of wide bandwidth and good accuracy has always b...
Adjacent Hall microsensors, comprising a silicon substrate and four contacts, providing simultaneous...
Four-terminal transducers can be used to measure the magnetic field via the Hall effect or the mecha...
This paper studies the effects of the covering layers on the performance of a cross-like Hall plate....
This work studies the effects of an aluminum covering on the performance of cross-like Hall devices....
This paper analyses sensitivity of Hall devices in the horizontal and vertical forms operating in th...
A detailed analysis of the cross-like Hall cells integrated in regular bulk CMOS technological proce...
This paper presents an analytical model for Hall Plates. The model includes the calculation of some ...
In this paper, the performance of CMOS Hall Effect Sensors with four different geometries has been e...
In this paper, a new single-device three-dimensional (3D) Hall sensor called a cross-shaped 3D Hall ...
The paper presents numerical model and validation of new methodology of offset voltage minimization ...
Several Hall sensor configurations have been integrated in CMOS technology and analyzed in terms of ...
This paper presents a four-folded current-mode vertical Hall device. The current spinning technique ...
This manuscript analyzes the effects of design parameters, such as aspect ratio, doping concentratio...
An integrated Hall sensor was designed and fabricated in a 0.5μm CMOS ONC5N/F process provided by MO...
A purely electronic four-quadrant analog multiplier of wide bandwidth and good accuracy has always b...
Adjacent Hall microsensors, comprising a silicon substrate and four contacts, providing simultaneous...
Four-terminal transducers can be used to measure the magnetic field via the Hall effect or the mecha...