Fabrication routes to realising ‘3D’ detectors in gallium arsenide have been investigated and their electrical characteristics measured. The geometry of the detector is hexagonal with a central anode surrounded by six cathode contacts. This geometry gives a uniform electric field with the maximum drift and depletion distance set by electrode spacings rather than detector thickness. The advantages of this structure include short collection distances, fast collection times and low depletion voltages depending on the electrode diameter and pitch chosen. These characteristics are fundamental for the application of 3D detectors in, for example, medical imaging and protein crystallography
In this work we present the results of a systematic study about SI GaAs detectors as a function of s...
A new type of three-dimensional (3D) detector, namely 3D-Open-Shell-Electrode Detector (3DOSED), is ...
We present a new 3D detector architecture aimed at simplifying the manufacturing process making it m...
Fabrication routes to realising '3D' detectors in gallium arsenide have been investigated and their ...
Fabrication routes to realising ‘3D ’ detectors in gallium arsenide (GaAs) have been investigated an...
Various fabrications routes to create ‘3D’ detectors have been investigated and the electrical chara...
The search for new semiconductor detectors has led to interesting developments in recent years. As w...
This thesis is concerned with the fabrication, characterisation and simulation of 3D semiconductor d...
The use of the 3D detector geometry, where the electrodes go through the bulk of the semiconductor i...
A novel type of GaAs radiation detector featuring a 3-D array of electrodes that penetrate through t...
In this work we present the results of a systematic study about SI GaAs detectors as a function of s...
Gallium arsenide pixel detectors processed on a 200 mu m Semi-Insulating (SI) Hitachi substrate were...
In this work we present the results of a systematic study about SI GaAs detectors as a function of s...
A new type of three-dimensional (3D) detector, namely 3D-Open-Shell-Electrode Detector (3DOSED), is ...
We present a new 3D detector architecture aimed at simplifying the manufacturing process making it m...
Fabrication routes to realising '3D' detectors in gallium arsenide have been investigated and their ...
Fabrication routes to realising ‘3D ’ detectors in gallium arsenide (GaAs) have been investigated an...
Various fabrications routes to create ‘3D’ detectors have been investigated and the electrical chara...
The search for new semiconductor detectors has led to interesting developments in recent years. As w...
This thesis is concerned with the fabrication, characterisation and simulation of 3D semiconductor d...
The use of the 3D detector geometry, where the electrodes go through the bulk of the semiconductor i...
A novel type of GaAs radiation detector featuring a 3-D array of electrodes that penetrate through t...
In this work we present the results of a systematic study about SI GaAs detectors as a function of s...
Gallium arsenide pixel detectors processed on a 200 mu m Semi-Insulating (SI) Hitachi substrate were...
In this work we present the results of a systematic study about SI GaAs detectors as a function of s...
A new type of three-dimensional (3D) detector, namely 3D-Open-Shell-Electrode Detector (3DOSED), is ...
We present a new 3D detector architecture aimed at simplifying the manufacturing process making it m...