A diamond-microchip GaInNAs VECSEL operating at 1315nm
- Smith, S.A.
- Hopkins, J.M.
- Hastie, J.E.
- Calvez, S.
- Kemp, A.J.
- Burns, D.
- Dawson, M.D.
- IEEE
Publication date
January 2004
DOI Publisher
IEEE ISSN
0013-5194 Citation count (estimate)
33Abstract
We present the first microchip vertical external-cavity surface-emitting semiconductor laser operating at 1.3 μm. Continuous-wave power >180 mW was achieved from a cavity volume ∼0.001 mm3 using a diode-pumped GaInNAs VECSEL structure capillary-bonded to a dielectric-mirror-coated diamond heatspreader
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