A comparison study for solving diffusion equations with different algorithm methods is studied to understand the oxygen vacancy defect transport under the electric field. We compare computational efficiency and numerical accuracy with different algorithm methods, including finite difference, finite element (COMSOL), and Fourier-Chebysev spectral methods. All the results of oxygen vacancy distribution under an electric field from different algorithm methods are compared with the analytical solution results. Two kinds of boundary conditions are used in solving diffusion equations and the absolute error of different methods are discussed. The main purpose of these results is to provide guidance for studying the role of point defect transport i...
Various finite difference and finite element methods for solving the one‐dimensional convective‐disp...
The commonly used partial differential equations for point defect diffusion are reviewed. Special at...
Keywords- Power bipolar devices, diffusion problems, modeling and simulation. This paper presents a ...
The Drift Diffusion equations constitute the simplest and most commonly used model for simulating se...
The design of modern semiconductor devices requires the numerical simulation of basic fabrication st...
In this paper, optimal error estimates are obtained for a method for numerically solving the so-call...
The paper contains information about analytical solutions of diffusion equation which have been obta...
A decomposition solution of a diffusion reaction problem, which models the density of di-vacancies a...
An extended Jive-stream model Jor diffusion in silicon is presented. A finite-difference method for ...
Various microband electrode problems are simulated using finite difference methods. These are (i) th...
A description is given of the application of the Moving Finite Element CMFE] method to the solution ...
The measurement of diffusion coefficients in today\u27s materials is complicated by the down scaling...
This thesis presents a model for coupled electrochemomechanics in Mixed Ionic Electronic Conductors ...
The boundary-value problem on impurity and point defect diffusion in the 2-layer semicon...
We analyze and benchmark the error and the convergence order of finite difference, finite-element as...
Various finite difference and finite element methods for solving the one‐dimensional convective‐disp...
The commonly used partial differential equations for point defect diffusion are reviewed. Special at...
Keywords- Power bipolar devices, diffusion problems, modeling and simulation. This paper presents a ...
The Drift Diffusion equations constitute the simplest and most commonly used model for simulating se...
The design of modern semiconductor devices requires the numerical simulation of basic fabrication st...
In this paper, optimal error estimates are obtained for a method for numerically solving the so-call...
The paper contains information about analytical solutions of diffusion equation which have been obta...
A decomposition solution of a diffusion reaction problem, which models the density of di-vacancies a...
An extended Jive-stream model Jor diffusion in silicon is presented. A finite-difference method for ...
Various microband electrode problems are simulated using finite difference methods. These are (i) th...
A description is given of the application of the Moving Finite Element CMFE] method to the solution ...
The measurement of diffusion coefficients in today\u27s materials is complicated by the down scaling...
This thesis presents a model for coupled electrochemomechanics in Mixed Ionic Electronic Conductors ...
The boundary-value problem on impurity and point defect diffusion in the 2-layer semicon...
We analyze and benchmark the error and the convergence order of finite difference, finite-element as...
Various finite difference and finite element methods for solving the one‐dimensional convective‐disp...
The commonly used partial differential equations for point defect diffusion are reviewed. Special at...
Keywords- Power bipolar devices, diffusion problems, modeling and simulation. This paper presents a ...