This paper presents the gain characterization and efficiency comparison of two reflection-format 1.3 μm GaInNAs vertical-cavity semiconductor optical amplifiers (VCSOAs) having six and fifteen quantum-wells. A maximum gain operation of 19 dB and 17 dB, respectively, is reported
Abstract—Vertical-cavity semiconductor optical amplifiers (VCSOAs) are interesting devices because o...
Abstract—This paper overviews the properties and possible ap-plications of long wavelength vertical-...
Hot electron light emission and lasing in semiconductor heterostructure (Hellish) devices are surfac...
This paper presents the gain characterization and efficiency comparison of two reflection-format 1.3...
This paper reports on theoretical and experimental investigations of the influence of the number of ...
Abstract—The authors present detailed, yet largely analytical, models for gain, optical bandwidth, a...
A GaInNAs/GaAs vertical cavity semiconductor optical amplifier (VCSOA) is reported. This is believed...
We report on the continuous-wave amplification characteristics of an optically pumped 1.3-/spl mu/m ...
We report on the continuous-wave amplification characteristics of an optically pumped 1.3-μm multipl...
A GaInNAs/GaAs vertical cavity semiconductor optical amplifier (VCSOA) is reported. This is believed...
We report on the continuous-wave amplification characteristics of an optically pumped 1.3- micron mu...
The compatibility of GaInNAs/GaAs active regions with AlGaAs Bragg mirror technology opens up a rang...
Vertical-cavity semiconductor optical amplifiers (VCSOAs) are interesting devices for a wide range o...
Presentation examining diode-pumped 1.3um GaInNAs vertical-cavity semiconductor optical amplifiers
Vertical-cavity semiconductor optical amplifiers (VCSOAs) are interesting devices because of their s...
Abstract—Vertical-cavity semiconductor optical amplifiers (VCSOAs) are interesting devices because o...
Abstract—This paper overviews the properties and possible ap-plications of long wavelength vertical-...
Hot electron light emission and lasing in semiconductor heterostructure (Hellish) devices are surfac...
This paper presents the gain characterization and efficiency comparison of two reflection-format 1.3...
This paper reports on theoretical and experimental investigations of the influence of the number of ...
Abstract—The authors present detailed, yet largely analytical, models for gain, optical bandwidth, a...
A GaInNAs/GaAs vertical cavity semiconductor optical amplifier (VCSOA) is reported. This is believed...
We report on the continuous-wave amplification characteristics of an optically pumped 1.3-/spl mu/m ...
We report on the continuous-wave amplification characteristics of an optically pumped 1.3-μm multipl...
A GaInNAs/GaAs vertical cavity semiconductor optical amplifier (VCSOA) is reported. This is believed...
We report on the continuous-wave amplification characteristics of an optically pumped 1.3- micron mu...
The compatibility of GaInNAs/GaAs active regions with AlGaAs Bragg mirror technology opens up a rang...
Vertical-cavity semiconductor optical amplifiers (VCSOAs) are interesting devices for a wide range o...
Presentation examining diode-pumped 1.3um GaInNAs vertical-cavity semiconductor optical amplifiers
Vertical-cavity semiconductor optical amplifiers (VCSOAs) are interesting devices because of their s...
Abstract—Vertical-cavity semiconductor optical amplifiers (VCSOAs) are interesting devices because o...
Abstract—This paper overviews the properties and possible ap-plications of long wavelength vertical-...
Hot electron light emission and lasing in semiconductor heterostructure (Hellish) devices are surfac...