1.3um GaInNAs monolithic vertical-cavity semiconductor optical amplifier

Calvez, S.
Clark, A.H.
Hopkins, J.M.
Macaluso, R.
Merlin, P.
Sun, H.D.
Dawson, M.D.
Jouhti, T.
Pessa, M.

Publication date

January 2003

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Abstract

We report development of a monolithically-grown GaInNAs/GaAs vertical amplifier for 1.3 /spl mu/m operation. When optically-pumped using a 980 nm fibre-coupled diode, demonstration of up to 17.7 dB of on-chip gain has been realised. Amplification with 12.8 dB peak gain, 12 GHz bandwidth and saturation output power of -4.8 dBm is also reported

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1.3um GaInNAs monolithic vertical-cavity semiconductor optical amplifier

Abstract

Extracted data

1.3um GaInNAs monolithic vertical-cavity semiconductor optical amplifier

Abstract

Extracted data

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