Femtosecond modelocked lasers using new ytterbium-doped borate crystals (Yb:Sr3Y(BO3)(3), Yb: Ca4GdO(BO3)(3) and Yb: Ca4YO(BO3)(3)) are demonstrated. Pulse duration as short as 69 fs has been obtained. To modelock such lasers, fast saturable absorbers need to be used. Two different types of fast saturable absorbers have been studied: low-temperature-grown semiconductor mirrors ( SESAM) and high-energy-ion-implanted semiconductor Bragg reflectors (SBR). We demonstrated, for the. first time to our knowledge, that ion-implanted SBR can be used to modelock oscillators using Yb-doped materials
Membres du jury : M. Alain Brun (directeur de thèse) M. Marc Brunel (rapporteur) M. Jean-Paul Chamba...
The development and advancement of high powered, sub-picosecond laser sources have been crucial to t...
We have generated pulses as short as 40 fs with an average power of 265 mW from a semiconductor satu...
Femtosecond modelocked lasers using new ytterbium-doped borate crystals (Yb:Sr3Y(BO3)3, Yb:Ca4GdO(B...
Abstract. We have developed a mode-locked diode-pumped Yb:KYW laser generating nearly band-width lim...
The authors present, what they believe to be, the first femtosecond Yb:YCOB laser, pumped by a low-p...
We report on the first passively mode-locked femtosecond-laser operation of a disordered Yb:Ca3Gd2(B...
International audienceWe report on the first passively mode-locked femtosecond-laser operation of a ...
The diode-pumped femtosecond laser passively mode-locked by an ion-implanted semi-conductor saturabl...
A Yb:YLF crystal has been investigated in a femtosecond oscillator pumped by two 400 mW single-mode ...
Paper discussing the application of an ion implanted semiconductor saturable-absorber mirror to inni...
A diode-pumped Yb31:Ca4GdO_BO3_3 (Yb:GdCOB) laser generating 90-fs pulses at a center wavelength of ...
Abstract: Laser amplifiers seek high power, efficiency, and short pulse durations. Research laborato...
A detailed performance comparison of new interesting Yb doped crystals in the same oscillator setup,...
Abstract—Intracavity semiconductor saturable absorber mir-rors (SESAM’s) offer unique and exciting p...
Membres du jury : M. Alain Brun (directeur de thèse) M. Marc Brunel (rapporteur) M. Jean-Paul Chamba...
The development and advancement of high powered, sub-picosecond laser sources have been crucial to t...
We have generated pulses as short as 40 fs with an average power of 265 mW from a semiconductor satu...
Femtosecond modelocked lasers using new ytterbium-doped borate crystals (Yb:Sr3Y(BO3)3, Yb:Ca4GdO(B...
Abstract. We have developed a mode-locked diode-pumped Yb:KYW laser generating nearly band-width lim...
The authors present, what they believe to be, the first femtosecond Yb:YCOB laser, pumped by a low-p...
We report on the first passively mode-locked femtosecond-laser operation of a disordered Yb:Ca3Gd2(B...
International audienceWe report on the first passively mode-locked femtosecond-laser operation of a ...
The diode-pumped femtosecond laser passively mode-locked by an ion-implanted semi-conductor saturabl...
A Yb:YLF crystal has been investigated in a femtosecond oscillator pumped by two 400 mW single-mode ...
Paper discussing the application of an ion implanted semiconductor saturable-absorber mirror to inni...
A diode-pumped Yb31:Ca4GdO_BO3_3 (Yb:GdCOB) laser generating 90-fs pulses at a center wavelength of ...
Abstract: Laser amplifiers seek high power, efficiency, and short pulse durations. Research laborato...
A detailed performance comparison of new interesting Yb doped crystals in the same oscillator setup,...
Abstract—Intracavity semiconductor saturable absorber mir-rors (SESAM’s) offer unique and exciting p...
Membres du jury : M. Alain Brun (directeur de thèse) M. Marc Brunel (rapporteur) M. Jean-Paul Chamba...
The development and advancement of high powered, sub-picosecond laser sources have been crucial to t...
We have generated pulses as short as 40 fs with an average power of 265 mW from a semiconductor satu...