ZnTe films have been prepared by two-sourced thermal evaporation. The effects of the deposition parameters, such as evaporation rate and substrate temperature, on the optical, and structural properties as well as the resulting composition of the films were studied. The optical parameters of the films ( Le. refractive index, absorption coefficient, optical band gap and film thickness) were calculated from the normal transmittance data. A 'model was proposed for the calculation of the optical parameters from the transmittance spectra. The transmittance formula, derived for using in the proposed model, includes most of the parameters affecting the transmittance spectra, i.e finite substrate thickness. absorption of the substrate, thickness irr...
Pulsed-laser deposition (PLD) of ZnTe was performed at; lambda(pld) = 1064 nm and; lambda(pld) = 532...
A procedure to make optical quality thin films of ZnxCd(1-x) Te by use of thermal evaporation of the...
Pulsed-laser deposition (PLD) of ZnTe was performed at; lambda(pld) = 1064 nm and; lambda(pld) = 532...
ZnTe thin films (d = 0.12 –1.80 m) were deposited onto glass substrates by the quasi-closed volume ...
ZnTe thin films of different thicknesses were deposited onto glass substrates for optical devices ap...
ZnTe thin films of different thicknesses were deposited onto glass substrates for optical devices ap...
ZnTe thin films of different thicknesses were deposited onto glass substrates for optical devices ap...
ZnTe films were deposited on glass substrates at different substrate temperatures in the range 30–3...
The II-VI compound semiconductors thin films have been prepared by different methods such as electro...
Stabilized un-doped Zinc Telluride (ZnTe) thin films were grown on glass substrates under vacuum usi...
Zinc telluride (ZnTe) is one of the attractive semiconducting compounds used in various optoelectron...
Zinc telluride (ZnTe) thin film was deposited onto glass substrates in terms of the thermal evaporat...
Pulsed-laser deposition (PLD) of ZnTe was performed at; lambda(pld) = 1064 nm and; lambda(pld) = 532...
Pulsed-laser deposition (PLD) of ZnTe was performed at; lambda(pld) = 1064 nm and; lambda(pld) = 532...
Zinc Telluride (ZnTe) thin films were deposited onto glass and CdTe substrates by CSVT (Close Space ...
Pulsed-laser deposition (PLD) of ZnTe was performed at; lambda(pld) = 1064 nm and; lambda(pld) = 532...
A procedure to make optical quality thin films of ZnxCd(1-x) Te by use of thermal evaporation of the...
Pulsed-laser deposition (PLD) of ZnTe was performed at; lambda(pld) = 1064 nm and; lambda(pld) = 532...
ZnTe thin films (d = 0.12 –1.80 m) were deposited onto glass substrates by the quasi-closed volume ...
ZnTe thin films of different thicknesses were deposited onto glass substrates for optical devices ap...
ZnTe thin films of different thicknesses were deposited onto glass substrates for optical devices ap...
ZnTe thin films of different thicknesses were deposited onto glass substrates for optical devices ap...
ZnTe films were deposited on glass substrates at different substrate temperatures in the range 30–3...
The II-VI compound semiconductors thin films have been prepared by different methods such as electro...
Stabilized un-doped Zinc Telluride (ZnTe) thin films were grown on glass substrates under vacuum usi...
Zinc telluride (ZnTe) is one of the attractive semiconducting compounds used in various optoelectron...
Zinc telluride (ZnTe) thin film was deposited onto glass substrates in terms of the thermal evaporat...
Pulsed-laser deposition (PLD) of ZnTe was performed at; lambda(pld) = 1064 nm and; lambda(pld) = 532...
Pulsed-laser deposition (PLD) of ZnTe was performed at; lambda(pld) = 1064 nm and; lambda(pld) = 532...
Zinc Telluride (ZnTe) thin films were deposited onto glass and CdTe substrates by CSVT (Close Space ...
Pulsed-laser deposition (PLD) of ZnTe was performed at; lambda(pld) = 1064 nm and; lambda(pld) = 532...
A procedure to make optical quality thin films of ZnxCd(1-x) Te by use of thermal evaporation of the...
Pulsed-laser deposition (PLD) of ZnTe was performed at; lambda(pld) = 1064 nm and; lambda(pld) = 532...