C-band emission from GaInNAsSbVCSEL on GaAS

The 1.55 /spl mu/m pulsed operation of an optically-pumped GaInNAsSb vertical-cavity surface-emitting laser (VCSEL) is reported. The structure employs a dielectric (SiO/sub 2//TiO/sub 2/) top mirror, while the bottom mirror and active region were grown on GaAs by MBE. Temperature-dependent (10-40/spl deg/C) laser measurements were made for an as-grown sample and an annealed sample, both having a room-temperature lasing wavelength of 1547 nm. Results indicate an annealing-induced blue-shift of the gain peak