Add to ORKGHigh-power, continuous-wave operation at red wavelengths has been achieved with a vertical external cavity surface emitting laser based on the GaInP/AlGaInP/GaAs material system. Output power of 0.4W was obtained in a linearly polarized, circularly symmetric, diffraction-limited beam. A birefringent filter inserted in the cavity allowed tuning of the laser output spectrum over a 10nm range around 674nm
A report is presented on an optically-pumped vertical-external-cavity surface-emitting laser at 1.55...
Vertical external cavity semiconductor lasers have emerged as an interesting technology based on cur...
Intra-cavity frequency-doubling in a beta-barium borate crystal has generated a total of 120mW conti...
High-power, continuous-wave operation at red wavelengths has been achieved with a vertical external ...
For the first time to our knowledge, high power continuous wave operation has been achieved with a v...
The extraction of high power with high beam quality from semiconductor lasers has long been a goal o...
We report an actively stabilised single-frequency vertical external cavity surface emitting laser op...
What is believed to be the first high-power vertical external cavity surface emitting laser (VECSEL)...
We present a vertical external-cavity surface-emitting laser operating at 1550 run. The laser compri...
A novel 1550 nm optically pumped VECSEL based on wafer fused InAlGaAs/InP-AlGaAs/GaAs half cavity sh...
A GaInP/AlGaInP vertical external cavity surface-emitting laser with an optically-contacted, single-...
Recently multiwatt power levels have been generated from Vertical External-Cavity Surface-Emitting L...
What is believed to be the first high-power vertical external cavity surface emitting laser (VECSEL)...
Optically pumped semiconductor vertical external cavity surface emitting lasers (VECSEL) were first ...
An optically pumped semiconductor vertical external cavity surface emitting laser, with high output ...
A report is presented on an optically-pumped vertical-external-cavity surface-emitting laser at 1.55...
Vertical external cavity semiconductor lasers have emerged as an interesting technology based on cur...
Intra-cavity frequency-doubling in a beta-barium borate crystal has generated a total of 120mW conti...
High-power, continuous-wave operation at red wavelengths has been achieved with a vertical external ...
For the first time to our knowledge, high power continuous wave operation has been achieved with a v...
The extraction of high power with high beam quality from semiconductor lasers has long been a goal o...
We report an actively stabilised single-frequency vertical external cavity surface emitting laser op...
What is believed to be the first high-power vertical external cavity surface emitting laser (VECSEL)...
We present a vertical external-cavity surface-emitting laser operating at 1550 run. The laser compri...
A novel 1550 nm optically pumped VECSEL based on wafer fused InAlGaAs/InP-AlGaAs/GaAs half cavity sh...
A GaInP/AlGaInP vertical external cavity surface-emitting laser with an optically-contacted, single-...
Recently multiwatt power levels have been generated from Vertical External-Cavity Surface-Emitting L...
What is believed to be the first high-power vertical external cavity surface emitting laser (VECSEL)...
Optically pumped semiconductor vertical external cavity surface emitting lasers (VECSEL) were first ...
An optically pumped semiconductor vertical external cavity surface emitting laser, with high output ...
A report is presented on an optically-pumped vertical-external-cavity surface-emitting laser at 1.55...
Vertical external cavity semiconductor lasers have emerged as an interesting technology based on cur...
Intra-cavity frequency-doubling in a beta-barium borate crystal has generated a total of 120mW conti...