We report internal quantum efficiency enhancement of thin p-GaN green quantum-well structure using self-assembled Ag nanoparticles. Temperature dependent photoluminescence measurements are conducted to determine the internal quantum efficiency. The impact of excitation power density on the enhancement factor is investigated. We obtain an internal quantum efficiency enhancement by a factor of 2.3 at 756 W/cm2, and a factor of 8.1 at 1 W/cm2. A Purcell enhancement up to a factor of 26 is estimated by fitting the experimental results to a theoretical model for the efficiency enhancement factor
We present a study of the optical properties of GaN/AlN and InGaN/GaN quantum dot (QD) superlattices...
Thesis (Ph.D.)--Boston UniversityInGaN alloys and related quantum structures are of great technologi...
The photoluminescence (PL) intensity enhancement and suppression mechanism on surface plasmons (SPs)...
We determine the internal quantum efficiency of strain-balanced AlGaN-InGaN-GaN hetero-structures de...
By die-attaching GaN-based light-emitting diodes (LEDs) on Si substrates with eutectic AuSn solder, ...
The internal quantum efficiency as a function of the internal electric field was studied in InGaN/Ga...
We investigated the surface plasmon coupling behavior in InGaN/GaN multiple quantum wells at 460 nm ...
We demonstrate enhanced external quantum efficiency and current-voltage characteristics due to scatt...
GaN/InGaN heterostructures were grown by molecular beam epitaxy on sapphire (0001). The photolumines...
International audienceThe variation of the internal quantum efficiency (IQE) of single InGaN quantum...
Metamorphic (i.e., linear composition graded) GaInN buffer layers with an increased in-plane lattice...
Abstract—We demonstrate the numerical study results of the enhancements of internal quantum efficien...
Excitation density-dependent microphotoluminescence measurements were performed on a green light (51...
We propose an optimal design for enhancing the external quantum efficiency of InGaN/GaN LEDs operati...
We report a dramatic increase in the photoluminescence (PL) emitted from InGaN/GaN quantum wells (QW...
We present a study of the optical properties of GaN/AlN and InGaN/GaN quantum dot (QD) superlattices...
Thesis (Ph.D.)--Boston UniversityInGaN alloys and related quantum structures are of great technologi...
The photoluminescence (PL) intensity enhancement and suppression mechanism on surface plasmons (SPs)...
We determine the internal quantum efficiency of strain-balanced AlGaN-InGaN-GaN hetero-structures de...
By die-attaching GaN-based light-emitting diodes (LEDs) on Si substrates with eutectic AuSn solder, ...
The internal quantum efficiency as a function of the internal electric field was studied in InGaN/Ga...
We investigated the surface plasmon coupling behavior in InGaN/GaN multiple quantum wells at 460 nm ...
We demonstrate enhanced external quantum efficiency and current-voltage characteristics due to scatt...
GaN/InGaN heterostructures were grown by molecular beam epitaxy on sapphire (0001). The photolumines...
International audienceThe variation of the internal quantum efficiency (IQE) of single InGaN quantum...
Metamorphic (i.e., linear composition graded) GaInN buffer layers with an increased in-plane lattice...
Abstract—We demonstrate the numerical study results of the enhancements of internal quantum efficien...
Excitation density-dependent microphotoluminescence measurements were performed on a green light (51...
We propose an optimal design for enhancing the external quantum efficiency of InGaN/GaN LEDs operati...
We report a dramatic increase in the photoluminescence (PL) emitted from InGaN/GaN quantum wells (QW...
We present a study of the optical properties of GaN/AlN and InGaN/GaN quantum dot (QD) superlattices...
Thesis (Ph.D.)--Boston UniversityInGaN alloys and related quantum structures are of great technologi...
The photoluminescence (PL) intensity enhancement and suppression mechanism on surface plasmons (SPs)...