Reliability of computer memories in radiation environment

Fetahović Irfan S.
Dolićanin Edin Ć.
Lončar Boris B.
Kartalović Nenad M.

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Publication date

January 2016

DOI

10.2298/NTRP1603240F

Publisher

VINCA Institute of Nuclear Sciences

ISSN

1451-3994

Journal

issn:1451-3994

Abstract

The aim of this paper is examining a radiation hardness of the magnetic (Toshiba MK4007 GAL) and semiconductor (AT 27C010 EPROM and AT 28C010 EEPROM) computer memories in the field of radiation. Magnetic memories have been examined in the field of neutron radiation, and semiconductor memories in the field of gamma radiation. The obtained results have shown a high radiation hardness of magnetic memories. On the other side, it has been shown that semiconductor memories are significantly more sensitive and a radiation can lead to an important damage of their functionality. [Projekat Ministarstva nauke Republike Srbije, br. 171007

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Reliability of computer memories in radiation environment

Abstract

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Reliability of computer memories in radiation environment

Abstract

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