Recent advances in technology leads to increasing high speed performance of submicrometer electron devices by the scaling of both process and geometry. In order to aid the design of these devices it is necessary to utilize powerful numerical simulation tools. In an industrial environment the simulation codes based on the Drift-Diffusion models have been widely used. However the shrinking dimension of the devices causes the Drift-Diffusion based simulators to become less accurate. Then it is necessary to utilize more refined models (including higher order moments of the distribution function) in order to correctly predict the behaviour of these devices. Several hydrodynamical models have been considered as viable simulation tools. It is poss...
Numerical modeling of nonstationary transport effects using partial differential equations derived f...
Extended hydrodynamic models for carrier transport are derived from the semiconductor Boltzmann equa...
The hydrodynamic approach of modeling the high-field electron transport in silicon is pursued in thi...
A two-dimensional general hydrodynamic equation (HDE) solver has been developed. The solver is capab...
Local carrier heating and nonstationary effects in deep-submicron silicon devices can lead to substa...
The hydrodynamic model has become popular in the last years in the field of analysis and simulation ...
A new method for the derivation of Hydrodynamic Equations has been developed. This new approach is m...
Theoretical and practical aspects of the design and implementation of the streamlinediffusion (SD) ...
A two-dimensional hierarchical hydrodynamic (HD) model based MOSFET simulator has been developed. Th...
Two hydrodynamic models for a non-parabolic band structure are proposed in order to obtain closed se...
We derive, using the Entropy Maximum Principle, an expression for the distribution function of carri...
CE TRAVAIL A ETE DEVELOPPE AUTOUR DE TROIS AXES. LE PREMIER EST CELUI DE LA MODELISATION MATHEMATIQU...
A one-dimensional device simulator based on the hydrodynamic model is developed for the simulation a...
This paper investigates the anisotropy properties of the relaxation times used in the hydrodynamic m...
The analysis of the switching behaviour of submicron devices brings about the necessity of extending...
Numerical modeling of nonstationary transport effects using partial differential equations derived f...
Extended hydrodynamic models for carrier transport are derived from the semiconductor Boltzmann equa...
The hydrodynamic approach of modeling the high-field electron transport in silicon is pursued in thi...
A two-dimensional general hydrodynamic equation (HDE) solver has been developed. The solver is capab...
Local carrier heating and nonstationary effects in deep-submicron silicon devices can lead to substa...
The hydrodynamic model has become popular in the last years in the field of analysis and simulation ...
A new method for the derivation of Hydrodynamic Equations has been developed. This new approach is m...
Theoretical and practical aspects of the design and implementation of the streamlinediffusion (SD) ...
A two-dimensional hierarchical hydrodynamic (HD) model based MOSFET simulator has been developed. Th...
Two hydrodynamic models for a non-parabolic band structure are proposed in order to obtain closed se...
We derive, using the Entropy Maximum Principle, an expression for the distribution function of carri...
CE TRAVAIL A ETE DEVELOPPE AUTOUR DE TROIS AXES. LE PREMIER EST CELUI DE LA MODELISATION MATHEMATIQU...
A one-dimensional device simulator based on the hydrodynamic model is developed for the simulation a...
This paper investigates the anisotropy properties of the relaxation times used in the hydrodynamic m...
The analysis of the switching behaviour of submicron devices brings about the necessity of extending...
Numerical modeling of nonstationary transport effects using partial differential equations derived f...
Extended hydrodynamic models for carrier transport are derived from the semiconductor Boltzmann equa...
The hydrodynamic approach of modeling the high-field electron transport in silicon is pursued in thi...