In tin dioxide nanostructures, oxygen vacancies (OVs) play an important role in their optical properties and thus regulation of both OV concentration and type via external strain is crucial to exploration of more applications. First-principle calculations of SnO2 (110) surface disclose that asymmetric deformations induced by external strain not only lead to its intrinsic surface elastic changes, but also result in different OV formation energy. In the absence of external strain, the energetically favorable oxygen vacancies(EFOV) appear in the bridging site of second layer. When -3.5% external strain is applied along y direction, the EFOV moves into plane site. This can be ascribed that the compressed deformation gives rise to redistribution...
The structural and electronic properties of bulk and both oxidized and reduced SnO2(110) surfaces as...
Understanding surface reconstruction of nanocrystals is of great importance to their applications, h...
The optical band gap of the prototypical semiconducting oxide SnO<sub>2</sub> is shown to be continu...
Tin monoxide (SnO) has promising properties to be applied as a p-type semiconductor in transparent e...
Tin monoxide (SnO) has promising properties to be applied as a p-type semiconductor in transparent e...
Understanding the interaction between oxygen molecules and metal oxide semiconductors surface is im...
The role of oxygen vacancies in temperature-dependent photoluminescence of SnO2 nanowires was invest...
The electronic structure of stoichiometric tin dioxide (SnO2) is studied by probing its unoccupied s...
Oxygen vacancies at the SnO(2) (110) and (101) surface and subsurface sites have been studied in the...
The electronic structure of stoichiometric tin dioxide (SnO2) is studied by probing its unoccupied s...
Atomic-scale defects strongly influence the electrical and optical properties of materials, and thei...
Density functional calculation at B3LYP level was employed to study the surface oxygen vacancies and...
The role of surface oxygen vacancies in the optical properties of tin dioxide nanobelts is investiga...
State-of-the-art computational methods have been applied in order to dissect the subtle features aff...
Defects in SnO2 nanowires have been studied by cathodoluminescence, and the obtained spectra have be...
The structural and electronic properties of bulk and both oxidized and reduced SnO2(110) surfaces as...
Understanding surface reconstruction of nanocrystals is of great importance to their applications, h...
The optical band gap of the prototypical semiconducting oxide SnO<sub>2</sub> is shown to be continu...
Tin monoxide (SnO) has promising properties to be applied as a p-type semiconductor in transparent e...
Tin monoxide (SnO) has promising properties to be applied as a p-type semiconductor in transparent e...
Understanding the interaction between oxygen molecules and metal oxide semiconductors surface is im...
The role of oxygen vacancies in temperature-dependent photoluminescence of SnO2 nanowires was invest...
The electronic structure of stoichiometric tin dioxide (SnO2) is studied by probing its unoccupied s...
Oxygen vacancies at the SnO(2) (110) and (101) surface and subsurface sites have been studied in the...
The electronic structure of stoichiometric tin dioxide (SnO2) is studied by probing its unoccupied s...
Atomic-scale defects strongly influence the electrical and optical properties of materials, and thei...
Density functional calculation at B3LYP level was employed to study the surface oxygen vacancies and...
The role of surface oxygen vacancies in the optical properties of tin dioxide nanobelts is investiga...
State-of-the-art computational methods have been applied in order to dissect the subtle features aff...
Defects in SnO2 nanowires have been studied by cathodoluminescence, and the obtained spectra have be...
The structural and electronic properties of bulk and both oxidized and reduced SnO2(110) surfaces as...
Understanding surface reconstruction of nanocrystals is of great importance to their applications, h...
The optical band gap of the prototypical semiconducting oxide SnO<sub>2</sub> is shown to be continu...