Add to ORKGThe contribution presents the results of simulation of direct tunnelling of free charge carriers through a thin gate insulator in MOS structures consisting of a Ta2O5/SiO2 bilayer taking into account also indirect tunnelling of free charge carriers through the SiO2/Si interface traps. The calculated I–V and C–V curves reveal the processes of electron and hole tunnelling through the insulator-to-semiconductor potential barrier that can be divided into four classes
We describe space-time evolution of electric charge induced in dielectric layer of simulated metal-i...
Two improvements to a comprehensive analytic model which describes the steady-state current in a met...
We propose a new double-box model of the oxide conduction band of MOS devices, aiming to quantitativ...
International audienceThis work presents an original approach to model direct tunneling current thro...
In this paper we present an integral physical model for describing electrical and dielectric propert...
Abstract—We report a milestone in device modeling whereby a planar MOSFET with extremely thin silico...
Direct and Fowler-Nordheim tunneling through ultra-thin gate dielectrics is modeled based on a new a...
Numerical simulations of the gate leakage current in metal-insulator-semiconductor (MIS) structures ...
This paper presents a new computer modeling of Fowler-Nordheim (F-N) tunneling current from an inver...
We propose a computationally efficient, accurate and numerically stable quantum- mechanical techniqu...
The algorithm is suggested for calculating the I–V characteristics of a voltage- or current-controll...
In this work, we show full-band calculations of the tunneling properties of ZrO2 and HfO2 high-kappa...
We propose a new double-box model of the oxide conduction band of MOS devices, aiming to quantitativ...
The gate oxide of sub-0.1 µm MOSFETs channel length is expected to be reduced beyond 3 nm in spite o...
Abstract:- High-k dielectric materials are being considered as replacement for SiO2 as the gate diel...
We describe space-time evolution of electric charge induced in dielectric layer of simulated metal-i...
Two improvements to a comprehensive analytic model which describes the steady-state current in a met...
We propose a new double-box model of the oxide conduction band of MOS devices, aiming to quantitativ...
International audienceThis work presents an original approach to model direct tunneling current thro...
In this paper we present an integral physical model for describing electrical and dielectric propert...
Abstract—We report a milestone in device modeling whereby a planar MOSFET with extremely thin silico...
Direct and Fowler-Nordheim tunneling through ultra-thin gate dielectrics is modeled based on a new a...
Numerical simulations of the gate leakage current in metal-insulator-semiconductor (MIS) structures ...
This paper presents a new computer modeling of Fowler-Nordheim (F-N) tunneling current from an inver...
We propose a computationally efficient, accurate and numerically stable quantum- mechanical techniqu...
The algorithm is suggested for calculating the I–V characteristics of a voltage- or current-controll...
In this work, we show full-band calculations of the tunneling properties of ZrO2 and HfO2 high-kappa...
We propose a new double-box model of the oxide conduction band of MOS devices, aiming to quantitativ...
The gate oxide of sub-0.1 µm MOSFETs channel length is expected to be reduced beyond 3 nm in spite o...
Abstract:- High-k dielectric materials are being considered as replacement for SiO2 as the gate diel...
We describe space-time evolution of electric charge induced in dielectric layer of simulated metal-i...
Two improvements to a comprehensive analytic model which describes the steady-state current in a met...
We propose a new double-box model of the oxide conduction band of MOS devices, aiming to quantitativ...