Asymmetrical passive intermodulation distortions of memristors with mathematical behavior models

A rigorous mathematical explanation and accurate numerical prediction for asymmetrical passive intermodulation (PIM) distortions of memristors are investigated in this article. This theoretical explanation is based on behavior models of memristors representing the interrelation between terminated voltages and currents. The simulated single-tone and two-tone signal spectrums for extremely low-frequency (Hz) and microwave (GHz) applications verify our proposed mathematical approach and the new discovery of asymmetrical PIM distortions. This presented method provides an innovative choice to model and simulate the external performance of circuits and systems with asymmetrical PIM distortions in the future