This paper discusses the various hierarchy levels that are possible when the full band structure is considered. At the highest level, the scatterings are treated using complete k-k’ transition rates, which entail extremely memory intensive computational applications. At the lowest level, the scattering anisotropy is neglected and the scattering rate is considered to be a constant average value on energy isosurfaces of the bandstructure. This model is more practical for device simulation. In between the two extremes, it is possible to design intermediate models which preserve some essential features of both. At all levels of the band structure hierarchy of models, there are similar issues of numerical noise, related to the sampling of real a...
These lecture notes give a simple introduction to some main ideas and techniques used in Monte Carlo...
The metal-semiconductor contact including the quantum mechanical tunneling effect is simulated by th...
Abs t rac t A method for assigning Monte-Carlo calculated quantities to nonuniform grids is pre-sent...
During the work with this master's thesis a number of improvements have been made to the Monte Carlo...
port simulation oers the possibility to ex-tract information about all quantities deriv-able from th...
A 3D parallel full band ensemble Monte Carlo device simulator is developed for simulation of nano sc...
A Monte Carlo simulator for silicon devices has been developed. The band structure data for this sel...
With the recent development of fast algorithms, the difference in capability between high-frequency ...
We introduce a scaled ensemble Monte Carlo (SEMQ technique to simulate high field electron transport...
We discuss the application of the fullband cellular automaton (CA) method for the simulation of char...
ii In semiconductor physics, many properties or phenomena of materials can be brought to light throu...
This work investigates the transport of electrons having energies near those of the atomic binding l...
This work presents a study of the applicability of a massively parallel computing paradigm to Monte ...
We present a multilevel Monte Carlo simulation method for analysing multi-scale physical systems via...
Monte Carlo methods always, in theory, offer exact solutions to any subsurface scattering problem. I...
These lecture notes give a simple introduction to some main ideas and techniques used in Monte Carlo...
The metal-semiconductor contact including the quantum mechanical tunneling effect is simulated by th...
Abs t rac t A method for assigning Monte-Carlo calculated quantities to nonuniform grids is pre-sent...
During the work with this master's thesis a number of improvements have been made to the Monte Carlo...
port simulation oers the possibility to ex-tract information about all quantities deriv-able from th...
A 3D parallel full band ensemble Monte Carlo device simulator is developed for simulation of nano sc...
A Monte Carlo simulator for silicon devices has been developed. The band structure data for this sel...
With the recent development of fast algorithms, the difference in capability between high-frequency ...
We introduce a scaled ensemble Monte Carlo (SEMQ technique to simulate high field electron transport...
We discuss the application of the fullband cellular automaton (CA) method for the simulation of char...
ii In semiconductor physics, many properties or phenomena of materials can be brought to light throu...
This work investigates the transport of electrons having energies near those of the atomic binding l...
This work presents a study of the applicability of a massively parallel computing paradigm to Monte ...
We present a multilevel Monte Carlo simulation method for analysing multi-scale physical systems via...
Monte Carlo methods always, in theory, offer exact solutions to any subsurface scattering problem. I...
These lecture notes give a simple introduction to some main ideas and techniques used in Monte Carlo...
The metal-semiconductor contact including the quantum mechanical tunneling effect is simulated by th...
Abs t rac t A method for assigning Monte-Carlo calculated quantities to nonuniform grids is pre-sent...