A simple statistical theory of radiation damage of semiconductor memory has been constructed. The radiation damage of EPROM memory has been investigated. The measured number of damaged bytes is significantly lower than the expected number resulting from the purely random distribution of the damaged bits. In this way it has been proven that there is a correlation between the failures of individual memory bits which are located in the same byte
[[abstract]]The research is based on the nuclear radiation induced soft error phenomenon associated ...
This paper compares the reliability of standard commercial Erasable Programmable Read Only Memory (E...
A brief outline is given of the processes of knock-on damage and electronic damage in electron micro...
This paper compares the reliability of standard commercial Erasable Programmable Read Only Memory (E...
In this study, we examine the reliability of erasable programmable read only memory (EPROM) and elec...
Bit-wise comparison of radiation and electrical effects on memory reliability to attempt to determin...
The aim of this paper is examining a radiation hardness of the magnetic (Toshiba MK4007 GAL) and ...
Methodologies are proposed for in-depth statistical analysis of Single Event Upset data. The motivat...
International audienceThis paper addresses a well-known problem that occurs when memories are expose...
Threshold voltage (Vth) behavior of nitride readonly memories (NROMs) was studied after irradiation ...
This article reviews state-of-the-art techniques for the evaluation of the effect of radiation on st...
The aim of this paper is applying statistical laws and enlargement law to determine a redundancy ...
This paper compares the reliability of standard commercial Erasable Programmable Read Only Memory (E...
A methodology is proposed for the statistical analysis of memory radiation test data, with the aim o...
This paper discusses the current problem of the electronic memory reliability in terms of the ionizi...
[[abstract]]The research is based on the nuclear radiation induced soft error phenomenon associated ...
This paper compares the reliability of standard commercial Erasable Programmable Read Only Memory (E...
A brief outline is given of the processes of knock-on damage and electronic damage in electron micro...
This paper compares the reliability of standard commercial Erasable Programmable Read Only Memory (E...
In this study, we examine the reliability of erasable programmable read only memory (EPROM) and elec...
Bit-wise comparison of radiation and electrical effects on memory reliability to attempt to determin...
The aim of this paper is examining a radiation hardness of the magnetic (Toshiba MK4007 GAL) and ...
Methodologies are proposed for in-depth statistical analysis of Single Event Upset data. The motivat...
International audienceThis paper addresses a well-known problem that occurs when memories are expose...
Threshold voltage (Vth) behavior of nitride readonly memories (NROMs) was studied after irradiation ...
This article reviews state-of-the-art techniques for the evaluation of the effect of radiation on st...
The aim of this paper is applying statistical laws and enlargement law to determine a redundancy ...
This paper compares the reliability of standard commercial Erasable Programmable Read Only Memory (E...
A methodology is proposed for the statistical analysis of memory radiation test data, with the aim o...
This paper discusses the current problem of the electronic memory reliability in terms of the ionizi...
[[abstract]]The research is based on the nuclear radiation induced soft error phenomenon associated ...
This paper compares the reliability of standard commercial Erasable Programmable Read Only Memory (E...
A brief outline is given of the processes of knock-on damage and electronic damage in electron micro...