Raman study of stress effect on Ge nanocrystals embedded in Al2O3

Pinto, S.R.C.
Rolo, A.G.
Chahboun, A.
Kashtiban, Reza J.
Bangert, U.
Gomes, M.J.M.

Publication date

January 2010

DOI

10.1016/j.tsf.2010.03.035

Publisher

Elsevier BV

ISSN

0040-6090

Citation count (estimate)

Abstract

Ge nanocrystals (NCs) embedded in Al2O3 were grown by RF-sputtering. X-ray diffraction, high resolution transmission electron microscopy, and Raman spectroscopy techniques were used to characterize the stresses on the NCs. While small NCs ( 17 nm) demonstrated a compressive stress effect. This could be linked to the crystal structure of the adjacent Al2O3 matrix

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Raman study of stress effect on Ge nanocrystals embedded in Al2O3

Abstract

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Raman study of stress effect on Ge nanocrystals embedded in Al2O3

Abstract

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