Numerical simulation of C-V and I-V characteristics of perovskite based solar cells

International audienceCompared with the almost long-time stuck power conversion efficiency of siliconphotovoltaics, halide perovskites materials are today among the most promising lowcostcandidates for solar power conversion due to their impressive efficiency increaseover the last few years, starting from 3.8% (2009) to over 22.1.0% (2016) , veryclose to the research record of traditional silicon based solar cells (25.0%). Hence, theyattract a huge interest, but nevertheless, for further improvement of the electricaland optical characteristics of the perovskite based solar cell, a deep understanding of thedevice physics, including band alignment, charge carrier traps and interfaces propertiesdeserves consideration.In order to give a physical insight into the solar cell operation, a numerical simulation,using Silvaco-Atlas software, coupled with carriers drift and diffusion model andPoisson equation is proposed in our work. In addition to the current density versusvoltage characteristic (JV) in dark or under AM1.5 sun illumination, the simulation ofthe capacitance versus voltage characteristic (CV) is performed and compared toexperimental data. A realistic band diagram of the device is presented, and the effect ofbulk and interface traps is studied. Moreover, the solutions for further efficiencyenhancement are discussed