International audienceNi electrodeposited on n-type Si from aqueous solutions in the form of isolated or coalescent nanoparticles (NPs) protects the underlying and partially exposed Si from photocorrosion-induced electrical passivation. Such photoanodes, fabricated without the need for additional protecting layers, a buried junction, and high vacuum techniques, show a high photovoltage of similar to 500 mV for the oxygen evolution reaction (OER), state-of-the-art photocurrents, and faradaic efficiencies > 90% under AM 1.5G illumination conditions at pH 14. Remarkably, these photoelectrodes are stable and can be operated at the light limited catalytic current from 10 h to more than 40 h in 1 M NaOH. These findings demonstrate that robust and...
Alkaline electrolytes impede the corrosion of Si photoanodes under positive potentials and/or illumi...
n-Si is a narrow band gap semiconductor that has been demonstrated as an excellent photoabsorber mat...
Introduction of an ultrathin (2 nm) film of cobalt oxide (CoO_x) onto n-Si photoanodes prior to sput...
International audienceSilicon (Si) is a prime candidate for manufacturing water-splitting photoelect...
[eng] With the burning of large amounts of traditional fossil fuels, global environmental pollution ...
Semiconductors with small band gaps (<2 eV) must be stabilized against corrosion or passivation in a...
International audienceH-2 is an ideal energy carrier because it has a high energy density, and it ca...
Heterojunction photoanodes, consisting of n-type crystalline Si(100) substrates coated with a thin ∼...
Semiconductors with small band gaps (<2 eV) must be stabilized against corrosion or passivation in a...
A new passivation strategy for an oxygen evolving Si photoanode for efficient and stable photoelectr...
It is beneficial to reduce thickness of high-purity of c-Siwafer for cost-effective water splitting ...
ConspectusThe electrochemical conversion of sunlight by photoelectrochemical cells (PECs) is based o...
Plasma-enhanced atomic layer deposition of cobalt oxide onto nanotextured p<sup>+</sup>n-Si devices ...
An electrocatalytic and stable nickel oxide (NiO_x) thin layer was successfully deposited on an n-Si...
An n+p-Si microwire array coupled with a two-layer catalyst film consisting of Ni–Mo nanopowder and ...
Alkaline electrolytes impede the corrosion of Si photoanodes under positive potentials and/or illumi...
n-Si is a narrow band gap semiconductor that has been demonstrated as an excellent photoabsorber mat...
Introduction of an ultrathin (2 nm) film of cobalt oxide (CoO_x) onto n-Si photoanodes prior to sput...
International audienceSilicon (Si) is a prime candidate for manufacturing water-splitting photoelect...
[eng] With the burning of large amounts of traditional fossil fuels, global environmental pollution ...
Semiconductors with small band gaps (<2 eV) must be stabilized against corrosion or passivation in a...
International audienceH-2 is an ideal energy carrier because it has a high energy density, and it ca...
Heterojunction photoanodes, consisting of n-type crystalline Si(100) substrates coated with a thin ∼...
Semiconductors with small band gaps (<2 eV) must be stabilized against corrosion or passivation in a...
A new passivation strategy for an oxygen evolving Si photoanode for efficient and stable photoelectr...
It is beneficial to reduce thickness of high-purity of c-Siwafer for cost-effective water splitting ...
ConspectusThe electrochemical conversion of sunlight by photoelectrochemical cells (PECs) is based o...
Plasma-enhanced atomic layer deposition of cobalt oxide onto nanotextured p<sup>+</sup>n-Si devices ...
An electrocatalytic and stable nickel oxide (NiO_x) thin layer was successfully deposited on an n-Si...
An n+p-Si microwire array coupled with a two-layer catalyst film consisting of Ni–Mo nanopowder and ...
Alkaline electrolytes impede the corrosion of Si photoanodes under positive potentials and/or illumi...
n-Si is a narrow band gap semiconductor that has been demonstrated as an excellent photoabsorber mat...
Introduction of an ultrathin (2 nm) film of cobalt oxide (CoO_x) onto n-Si photoanodes prior to sput...