Fabrication and Characterization of Nanoscale Devices made from Molybdenum Disulfide

2018Using a simple dry transfer process, I construct and characterize three nanoscale MoS2 devices with current-voltage curves as well as Raman spectroscopy, optical and atomic force microscopy. I compare these devices, the thinnest of which was few layer ( ≤ 10 nm) MoS2 capable of producing a photocurrent whose magnitude is affected by a split gate bias voltage. The thinnest device’s results show mechanical exfoliation paired with a dry transfer is an economical and effective way to fabricate ultrathin gatetunable devices