We used depth-resolved cathodoluminescence spectroscopy and surface photovoltage spectroscopy to measure the densities, energy levels, and spatial distributions of zinc/magnesium cation and oxygen vacancies in isostructural, single-phase, non-polar MgxZn1-xO alloys over a wide (0 ≤ x ≤ 0.56) range. Within this wide range, both defect types exhibit strong Mg content-dependent surface segregation and pronounced bulk density minima corresponding to unit cell volume minima, which can inhibit defect formation due to electrostatic repulsion. Mg in ZnO significantly reduces native defect densities and their non-polar surface segregation, both major factors in carrier transport and doping of these oxide semiconductorsThe authors gratefully acknowle...
The growth techniques for Mg_xZn_(1−x)O thin films have advanced at a rapid pace in recent years, en...
The inherently complex chemical and crystallographic nature of oxide materials has suppressed the pu...
We report microstructural characterization of heavily Ga-doped ZnO (GZO) thin films on GaN and sapph...
We used depth-resolved cathodoluminescence spectroscopy and surface photovoltage spectroscopy to mea...
We have investigated the impact of strain on the incorporation and the properties of extended and po...
Deep level defects in n-type unintentionally doped a-plane MgxZn1−xO, grown by molecular beam epitax...
[[abstract]]X-rayabsorption near-edge structure (XANES) and x-ray emission spectroscopy (XES) measur...
The authors used depth-resolved cathodoluminescence spectroscopy and current-voltage measurements to...
Alloying has the potential to create new types of semiconductors with novel optical properties that ...
Vegard’s law and inductively coupled plasma atomic emission spectrometry were employed to determine ...
A first principles calculation is used to simulate the variation of the lattice constant, structure,...
A combination of depth-resolved electronic and structural techniques reveals that native point defec...
Zinc oxide is a wide bandgap semiconductor with relatively large exciton energy of 60 meV, and longi...
Atomic reconstruction at the interface of MgZnO and ZnO in molecular beam epitaxy grown heterostruct...
Low-temperature photoluminescence and reflectance measurements were employed to study the optical tr...
The growth techniques for Mg_xZn_(1−x)O thin films have advanced at a rapid pace in recent years, en...
The inherently complex chemical and crystallographic nature of oxide materials has suppressed the pu...
We report microstructural characterization of heavily Ga-doped ZnO (GZO) thin films on GaN and sapph...
We used depth-resolved cathodoluminescence spectroscopy and surface photovoltage spectroscopy to mea...
We have investigated the impact of strain on the incorporation and the properties of extended and po...
Deep level defects in n-type unintentionally doped a-plane MgxZn1−xO, grown by molecular beam epitax...
[[abstract]]X-rayabsorption near-edge structure (XANES) and x-ray emission spectroscopy (XES) measur...
The authors used depth-resolved cathodoluminescence spectroscopy and current-voltage measurements to...
Alloying has the potential to create new types of semiconductors with novel optical properties that ...
Vegard’s law and inductively coupled plasma atomic emission spectrometry were employed to determine ...
A first principles calculation is used to simulate the variation of the lattice constant, structure,...
A combination of depth-resolved electronic and structural techniques reveals that native point defec...
Zinc oxide is a wide bandgap semiconductor with relatively large exciton energy of 60 meV, and longi...
Atomic reconstruction at the interface of MgZnO and ZnO in molecular beam epitaxy grown heterostruct...
Low-temperature photoluminescence and reflectance measurements were employed to study the optical tr...
The growth techniques for Mg_xZn_(1−x)O thin films have advanced at a rapid pace in recent years, en...
The inherently complex chemical and crystallographic nature of oxide materials has suppressed the pu...
We report microstructural characterization of heavily Ga-doped ZnO (GZO) thin films on GaN and sapph...