We investigate the metallic phases observed in hybrid metal-GaAs nanowire devices obtained by controlled thermal annealing of Ni/Au electrodes. Devices are fabricated onto a SiN membrane compatible with transmission electron microscopy studies. Energy dispersive X-ray spectroscopy allows us to show that the nanowire body includes two Ni-rich phases that thanks to an innovative use of electron diffraction tomography can be unambiguously identified as Ni3GaAs and Ni5As2 crystals. The mechanisms of Ni incorporation leading to the observed phenomenology are discussed
Advances in the fabrication and characterization of nanowires polytypes have made crystal phase engi...
Semiconductor nanowires are studied by using transmission electron microscopy (TEM) based methods in...
Here we report on the heat-induced solid-state replacement of GaAs by Au in nanowires. Such replacem...
We investigate the metallic phases observed in hybrid metal-GaAs nanowire devices obtained by contro...
Present work provides an electrodeposition based methodology for synthesizing Ni-rich, Ag-Ni nanowir...
We demonstrate the formation of nanoscale axial Schottky contacts in GaAs nanowires by thermal annea...
The rapid development of ultrascaled III−V compound-semiconductor devices requires the detailed inve...
International audienceUnique growth mechanisms involved in semiconductor nanowires (NWs) pave the wa...
The mechanism of nickel (Ni) metallization in silicon-germanium (Si0.5Ge0.5) alloy nanowire (NW) was...
Semiconductor nanowires (NWs) and Fin structures are promising building blocks for next generation u...
Incorporation of catalyst atoms during the growth process of semiconductor nanowires reduces the ele...
Cylindrical, metallic nanowires were electrochemically grown in nanochannels created in polymer memb...
We report the synthesis, phase transformation, and electrical property measurement of single-crystal...
We investigated by means of transmission electron microscopy (TEM) GaAs-AlGaAs core-shell nanowires ...
This thesis concerns growth and characterization of gold-particle seeded nanowires of III-V semicond...
Advances in the fabrication and characterization of nanowires polytypes have made crystal phase engi...
Semiconductor nanowires are studied by using transmission electron microscopy (TEM) based methods in...
Here we report on the heat-induced solid-state replacement of GaAs by Au in nanowires. Such replacem...
We investigate the metallic phases observed in hybrid metal-GaAs nanowire devices obtained by contro...
Present work provides an electrodeposition based methodology for synthesizing Ni-rich, Ag-Ni nanowir...
We demonstrate the formation of nanoscale axial Schottky contacts in GaAs nanowires by thermal annea...
The rapid development of ultrascaled III−V compound-semiconductor devices requires the detailed inve...
International audienceUnique growth mechanisms involved in semiconductor nanowires (NWs) pave the wa...
The mechanism of nickel (Ni) metallization in silicon-germanium (Si0.5Ge0.5) alloy nanowire (NW) was...
Semiconductor nanowires (NWs) and Fin structures are promising building blocks for next generation u...
Incorporation of catalyst atoms during the growth process of semiconductor nanowires reduces the ele...
Cylindrical, metallic nanowires were electrochemically grown in nanochannels created in polymer memb...
We report the synthesis, phase transformation, and electrical property measurement of single-crystal...
We investigated by means of transmission electron microscopy (TEM) GaAs-AlGaAs core-shell nanowires ...
This thesis concerns growth and characterization of gold-particle seeded nanowires of III-V semicond...
Advances in the fabrication and characterization of nanowires polytypes have made crystal phase engi...
Semiconductor nanowires are studied by using transmission electron microscopy (TEM) based methods in...
Here we report on the heat-induced solid-state replacement of GaAs by Au in nanowires. Such replacem...