The unoccupied electronic band structure of the Ge(001)2 × 1 surface along the \̄gGJ̄J̄' line of the surface Brillouin zone is investigated in an energy regime from the vacuum level up to about 22 eV above the valence band maximum (VBM) by applying a new constant initial band (CIB) mode of angle-resolved photoelectron spectroscopy using synchrotron radiation. In this mode final energy and photon energy are simultaneously scanned in accordance with energy and momentum conservation using a preselected dispersive initial band. We have chosen the well known occupied dangling-bond band as initial band which lies close to the uppermost bulk band at k⊥ = 0. Several bulk emission features are observed, showing good agreement with pseudopotential ba...
Clean and metal-adsorbed (100) surfaces of group-IV semiconductors, such as Si and Ge, often exhibit...
Using angle resolved laser photoemission spectroscopy we have measured the transient narrowing of th...
AbstractThe valence band structure along the Γ-T and T-W-L directions in the Brillouin zone of GeTe ...
The unoccupied electronic band structure of the Ge(001)2 × 1 surface along the \̄gGJ̄J̄' line of the...
Applying in-situ combination of angle-resolved photoemission and inverse photoemission spectroscopy ...
The GaSb(001) surface prepared by ion bombardment and annealing is investigated by angle-resolved ph...
This paper describes a study concerning the interaction of oxygen with clean Ge(001)2 × 1 surfaces i...
The optical, electrical, and chemical properties of semiconductor surfaces are largely determined by...
The valence band structure of the (2×1) reconstructed surface of ZnSe{001} has been investigated usi...
Angle-resolved off-normal constant-initial-state (CIS) photoemission is shown to be effectively appl...
Variable temperature photoemission studies in the literature have revealed the presence of a surface...
The electronic structure of H/Ge(111)1×1 was investigated using angle-resolved photoelectron spectro...
Valence band photoemission has been carried out on Ge(100) from below room temperature to 1173 K. Th...
We present the result of a combined ab initio theoretical study and ultraviolet photoemission spectr...
The 3d surface core-level shifts of the clean Ge(100)(2 71) surface have been investigated at 300 K ...
Clean and metal-adsorbed (100) surfaces of group-IV semiconductors, such as Si and Ge, often exhibit...
Using angle resolved laser photoemission spectroscopy we have measured the transient narrowing of th...
AbstractThe valence band structure along the Γ-T and T-W-L directions in the Brillouin zone of GeTe ...
The unoccupied electronic band structure of the Ge(001)2 × 1 surface along the \̄gGJ̄J̄' line of the...
Applying in-situ combination of angle-resolved photoemission and inverse photoemission spectroscopy ...
The GaSb(001) surface prepared by ion bombardment and annealing is investigated by angle-resolved ph...
This paper describes a study concerning the interaction of oxygen with clean Ge(001)2 × 1 surfaces i...
The optical, electrical, and chemical properties of semiconductor surfaces are largely determined by...
The valence band structure of the (2×1) reconstructed surface of ZnSe{001} has been investigated usi...
Angle-resolved off-normal constant-initial-state (CIS) photoemission is shown to be effectively appl...
Variable temperature photoemission studies in the literature have revealed the presence of a surface...
The electronic structure of H/Ge(111)1×1 was investigated using angle-resolved photoelectron spectro...
Valence band photoemission has been carried out on Ge(100) from below room temperature to 1173 K. Th...
We present the result of a combined ab initio theoretical study and ultraviolet photoemission spectr...
The 3d surface core-level shifts of the clean Ge(100)(2 71) surface have been investigated at 300 K ...
Clean and metal-adsorbed (100) surfaces of group-IV semiconductors, such as Si and Ge, often exhibit...
Using angle resolved laser photoemission spectroscopy we have measured the transient narrowing of th...
AbstractThe valence band structure along the Γ-T and T-W-L directions in the Brillouin zone of GeTe ...