Based on scanning tunneling microscopy and surface X-ray diffraction, we propose a complex structural model for the Ge(103)-(4 × 1) reconstruction. Each unit cell contains two (103) double steps, which gives rise to the formation of stripes of Ge atoms oriented in the [3¯01] direction. The stripes and the spaces between them are covered with threefold-coordinated Ge adatoms. Charge is transferred from the bulk-like edge atoms of the double steps to the adatoms. The formation of the reconstruction can be explained in terms of stress relief, charge transfer, and minimization of the dangling bonds
The pristine Ge(1 1 0) surface is composed of Ge pentagons, which are arranged in relatively large (...
We have performed an x-ray diffraction study of the Ge(111)-c(2×8) surface. From the analysis of 43 ...
Apparently, silicon - a group-IV semiconductor is the basis of the multi-billion dollar industry of ...
Based on scanning tunneling microscopy and surface X-ray diffraction, we propose a complex structura...
We have studied the clean and well-annealed Ge(103) surface with scanning tunnel microscopy (STM) an...
The atomic structure of the Ge(313)5x1 surface is studied in the present paper. On the basis of high...
The atomic structure of the Ge(101)c(8X10) surface is studied in the present paper by means of scann...
A structure model for the Ge(111)-(4×4)-Ag surface is proposed. The model was derived by applying di...
We have studied the clean and well-annealed Ge(113) surface with scanning tunneling microscopy (STM)...
We have studied the Ge(112)-(4 ?? 1)-In reconstruction with scanning tunneling microscopy (STM). Bas...
The three-dimensional atomic coordinates of the Ge(113)-(3×1) surface have been determined by analyz...
A detailed structural model of the indium-induced Ge(103)-(1×1) surface reconstruction has been esta...
We report a stable germanium surface (15 3 23), which among all known stable germanium as well as si...
The superstructures formed by low coverages of In adsorbed on Ge(001) have been studied using scanni...
The pristine Ge(1 1 0) surface is composed of Ge pentagons, which are arranged in relatively large (...
The pristine Ge(1 1 0) surface is composed of Ge pentagons, which are arranged in relatively large (...
We have performed an x-ray diffraction study of the Ge(111)-c(2×8) surface. From the analysis of 43 ...
Apparently, silicon - a group-IV semiconductor is the basis of the multi-billion dollar industry of ...
Based on scanning tunneling microscopy and surface X-ray diffraction, we propose a complex structura...
We have studied the clean and well-annealed Ge(103) surface with scanning tunnel microscopy (STM) an...
The atomic structure of the Ge(313)5x1 surface is studied in the present paper. On the basis of high...
The atomic structure of the Ge(101)c(8X10) surface is studied in the present paper by means of scann...
A structure model for the Ge(111)-(4×4)-Ag surface is proposed. The model was derived by applying di...
We have studied the clean and well-annealed Ge(113) surface with scanning tunneling microscopy (STM)...
We have studied the Ge(112)-(4 ?? 1)-In reconstruction with scanning tunneling microscopy (STM). Bas...
The three-dimensional atomic coordinates of the Ge(113)-(3×1) surface have been determined by analyz...
A detailed structural model of the indium-induced Ge(103)-(1×1) surface reconstruction has been esta...
We report a stable germanium surface (15 3 23), which among all known stable germanium as well as si...
The superstructures formed by low coverages of In adsorbed on Ge(001) have been studied using scanni...
The pristine Ge(1 1 0) surface is composed of Ge pentagons, which are arranged in relatively large (...
The pristine Ge(1 1 0) surface is composed of Ge pentagons, which are arranged in relatively large (...
We have performed an x-ray diffraction study of the Ge(111)-c(2×8) surface. From the analysis of 43 ...
Apparently, silicon - a group-IV semiconductor is the basis of the multi-billion dollar industry of ...