Surface electronic structure of metastable FeSi(CsCl)(111) epitaxially grown on Si(111)
- Hinarejos, J. J.
- Castro, G. R.
- Yang, S. H.
- Ordejón, P.
- Adams, J. B.
- Segovia, P.
- Alvarez, J.
- Michel, E. G.
- Miranda, R.
- Rodríguez-Marco, A.
- Sánchez-Portal, D.
- Artacho, E.
- Ynduráin, F.
DOIAbstract
We report an investigation on the electronic structure of metastable, epitaxial FeSi films grown on Si(111). The electronic structure of the metastable silicides was probed with angle-resolved photoemission, and compared with theoretical calculations. We identify the silicide as FeSi crystallizing in the CsCl structure. Its surface is Fe terminated, and presents a prominent, strongly dispersing surface state at a binding energy of -3.5 eV in Γ-bar. Its origin lies in the truncation of Fe bonds at the surface, and thus it has a major Fe dz2 content
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