Epitaxial thin films of cubic carbon modifications: Diamond and Fullerenes

The quality of thin epitaxial diamond films on silicon and fullerene films on mica is limited by lattice defects and the degree of orientational ordering of the grains. These microstructural features are studied by scanning electron microscopy, atomic force microscopy, X-ray diffraction, partly with use of synchrotron radiation, and orientation imaging microscopy. In this report, the recent results of growth and twinning of heteroepitaxial diamond and fullerene films, of the orientation relationship for high order twinning, the study of twinning by single orientation measurements and the influence of the deposition processes on film formation are summarized