Texture analysis of chemical vapor deposited diamond films on silicon by the component method

Oriented diamond films have been grown on Si(001) and Si(111) substrates by microwave plasma chemical vapor deposition. X‐ray diffractometry has been employed for pole figure measurements which have been evaluated by the component method. This technique can be applied to multiphase materials with overlapping pole figures. It decomposes the texture into components by identifying preferred directions in the pole density distribution. Thereby the textures of both diamond on Si(001) and on Si(111) have been reproduced quantitatively elucidating the heteroepitaxial orientational relationship and the occurrence of twinning. The volume fractions of both epitaxially oriented diamond crystallites and their twins of first order have been determined. It is shown that under the employed nucleation and growth conditions twinning is more pronounced for diamond on Si(111) than on Si(001). Furthermore, the fraction of randomly oriented crystallites in both textures has been determined