We studied the roughness evolution of Si surfaces upon Ar ion erosion in real time. Following the theory of surface kinetic roughening, a model proposed by Majaniemi was used to obtain the value of the dynamic scaling exponent beta from our data. The model was found to explain both the observed roughening and the smoothening of the surfaces. The values of the scaling exponents alpha and beta, important for establishing a universal model for ion erosion of (Si) surfaces, have been determined. The value of beta proved to increase with decreasing ion energy, while the static scaling exponent. was found to be ion energy independent. (C) 2010 Elsevier B.V. All rights reserved
We have studied the early stage dynamics of ripple patterns on Si surfaces, in the fluence range of ...
Scanning tunneling microscopy (STM) was used to quantitatively investigate the fractal nature of MeV...
In this work the roughness and topography evolution of optical materials sputtered with low energy i...
We studied the roughness evolution of Si surfaces upon Ar ion erosion in real time. Following the th...
20 pages, 5 figures.-- Contributed to: 4th CTP Workshop on Statistical Physics "Dynamics of Fluctuat...
4 pages, 2 figures.-- PACS nrs.: 79.20.Rf, 64.60.Ht, 68.35.Rh.We derive a stochastic nonlinear equat...
In the first part of this work, molecular dynamics simulation is used to produce crater functions wh...
106 p.Thesis (Ph.D.)--University of Illinois at Urbana-Champaign, 2007.In the second part of the wor...
The post-initial growth dynamic scaling exponent β, which describes the surface roughness evolution ...
The surface roughness evolution during a-Si:H film growth from a SiH3 beam under purely chemical dep...
Abstract: The temporal evolution of ripple pattern on Ge, Si, Al2O3, and SiO2 by low-energy ion beam...
The surface morphology of low-energy Kr+-polished amorphous Si layers is studied by topographical me...
Atomic- or nanometer-scale surface roughening has been investigated during Si etching in inductively...
We have studied the early stage dynamics of ripple patterns on Si surfaces, in the fluence range of ...
Scanning tunneling microscopy (STM) was used to quantitatively investigate the fractal nature of MeV...
In this work the roughness and topography evolution of optical materials sputtered with low energy i...
We studied the roughness evolution of Si surfaces upon Ar ion erosion in real time. Following the th...
20 pages, 5 figures.-- Contributed to: 4th CTP Workshop on Statistical Physics "Dynamics of Fluctuat...
4 pages, 2 figures.-- PACS nrs.: 79.20.Rf, 64.60.Ht, 68.35.Rh.We derive a stochastic nonlinear equat...
In the first part of this work, molecular dynamics simulation is used to produce crater functions wh...
106 p.Thesis (Ph.D.)--University of Illinois at Urbana-Champaign, 2007.In the second part of the wor...
The post-initial growth dynamic scaling exponent β, which describes the surface roughness evolution ...
The surface roughness evolution during a-Si:H film growth from a SiH3 beam under purely chemical dep...
Abstract: The temporal evolution of ripple pattern on Ge, Si, Al2O3, and SiO2 by low-energy ion beam...
The surface morphology of low-energy Kr+-polished amorphous Si layers is studied by topographical me...
Atomic- or nanometer-scale surface roughening has been investigated during Si etching in inductively...
We have studied the early stage dynamics of ripple patterns on Si surfaces, in the fluence range of ...
Scanning tunneling microscopy (STM) was used to quantitatively investigate the fractal nature of MeV...
In this work the roughness and topography evolution of optical materials sputtered with low energy i...