Add to ORKGWe present experimental evidence on the donor level related to optical properties of the Er3+ ion in crystalline silicon. Using two-color spectroscopy with a free-electron laser we provide a direct link between the identified level in the bandgap and the optical properties of EP,. The investigation is performed in sublimation MBE-grown Si/Si:Er multinanolayer structure, which allows us to take advantage of the preferential formation of a single Er-related center. Quenching of the Er-related 1.5 mu m photoluminescence, due to ionization of the donor state with energy E-D approximate to 225 meV, is demonstrated. A microscopic model of the PL quenching mechanism as Auger type energy transfer between excited Er3+ ions and free carriers opticall...
A possibility to realize optical transitions within the I-4(15/2) ground state of Er3+ ion in Si, be...
Optical properties of directly excited erbium (Er3+) ions have been studied in silicon rich silicon ...
The several processes required to achieve Er luminescence in Si are investigated. In particular, the...
We present experimental evidence on the donor level related to optical properties of the Er3+ ion in...
Among Er-doped crystalline Si materials, Si/Si:Er multi-nanolayer structures grown by sublimation mo...
Exciton-mediated energy transfer model in Er-doped silicon was presented. The emission intensity is ...
We investigate the influence of infrared illumination using a free-electron laser on the photolumine...
We have investigated the percentage of Er3+ ions which contribute to the low temperature 1.5-mu m ph...
Two-color optical spectroscopy is used to directly manipulate shallow levels available in Si:Er samp...
Influence of oxygen on optical activity and thermal stability of the 1.5 mu m emission of Er3+ ions ...
We have investigated the role of the Si excess on the photoluminescence properties of Er doped subst...
A detailed investigation on the excitation and deexcitation processes of Er3+ in Si is reported. In ...
In Er-doped silicon we have found direct evidence for the formation of the Er-related intermediate s...
Energy transfer to free carriers in an Auger process is well known to hamper emission of rare-earth ...
Optical properties of directly excited erbium (Er(3+)) ions have been studied in silicon rich silico...
A possibility to realize optical transitions within the I-4(15/2) ground state of Er3+ ion in Si, be...
Optical properties of directly excited erbium (Er3+) ions have been studied in silicon rich silicon ...
The several processes required to achieve Er luminescence in Si are investigated. In particular, the...
We present experimental evidence on the donor level related to optical properties of the Er3+ ion in...
Among Er-doped crystalline Si materials, Si/Si:Er multi-nanolayer structures grown by sublimation mo...
Exciton-mediated energy transfer model in Er-doped silicon was presented. The emission intensity is ...
We investigate the influence of infrared illumination using a free-electron laser on the photolumine...
We have investigated the percentage of Er3+ ions which contribute to the low temperature 1.5-mu m ph...
Two-color optical spectroscopy is used to directly manipulate shallow levels available in Si:Er samp...
Influence of oxygen on optical activity and thermal stability of the 1.5 mu m emission of Er3+ ions ...
We have investigated the role of the Si excess on the photoluminescence properties of Er doped subst...
A detailed investigation on the excitation and deexcitation processes of Er3+ in Si is reported. In ...
In Er-doped silicon we have found direct evidence for the formation of the Er-related intermediate s...
Energy transfer to free carriers in an Auger process is well known to hamper emission of rare-earth ...
Optical properties of directly excited erbium (Er(3+)) ions have been studied in silicon rich silico...
A possibility to realize optical transitions within the I-4(15/2) ground state of Er3+ ion in Si, be...
Optical properties of directly excited erbium (Er3+) ions have been studied in silicon rich silicon ...
The several processes required to achieve Er luminescence in Si are investigated. In particular, the...