We have made direct measurements of the intersubband lifetime in single GaAs quantum wells below the optical phonon energy at 36 meV, At low temperatures and excitations LO phonon emission is inhibited and acoustic phonon emission dominates; a sharp cross-over exists between the two regimes. Rate equation calculations have been performed for the single well samples with no fitting parameters and these agree well with experiment. The calculations have been extended to coupled quantum wells and we find that by careful tuning of the well widths the LO phonon rate can be tuned by up to an order of magnitude
The exciton population in a higher subband of GaAs quantum wells, below the free carrier continuum, ...
We investigate exciton–acoustic phonon interaction for both LA and TA phonons obtained from deformat...
Anti-Stokes Raman scattering has been used to investigate hot carrier dynamics in GaAs/AlGaAs quantu...
We have made direct measurements of the intersubband lifetime in single GaAs quantum wells below the...
The problem of intersubband relaxation in GaAs/GaAs quantum wells, where the energy separation of th...
The problem of intersubband relaxation in GaAs/GaAs quantum wells, where the energy separation of th...
In this thesis intersubband relaxation of electrons in quantum wells is theoretically investigated. ...
We report the direct observation of a bottleneck in electron cooling in wide GaAs quantum wells. Int...
We report the direct observation of a bottleneck in electron cooling in wide GaAs quantum wells. Int...
This thesis describes an optical study of the intersubband relaxation of carriers in GaAs multiple q...
Subband separation energy dependence of intersubband relaxation time in a wide quantum well (250 Ang...
We report a detailed analysis of the coupling between the polar longitudinal optical (LO) phonon an...
In the present work, we theoretically investigate the intersubband relaxation of electrons in quantu...
Excitonic processes involving LA, TA, and LO phonons are studied in quantum wells. We have derived e...
This thesis describes an optical study of the intersubband relaxation of carriers in GaAs multiple q...
The exciton population in a higher subband of GaAs quantum wells, below the free carrier continuum, ...
We investigate exciton–acoustic phonon interaction for both LA and TA phonons obtained from deformat...
Anti-Stokes Raman scattering has been used to investigate hot carrier dynamics in GaAs/AlGaAs quantu...
We have made direct measurements of the intersubband lifetime in single GaAs quantum wells below the...
The problem of intersubband relaxation in GaAs/GaAs quantum wells, where the energy separation of th...
The problem of intersubband relaxation in GaAs/GaAs quantum wells, where the energy separation of th...
In this thesis intersubband relaxation of electrons in quantum wells is theoretically investigated. ...
We report the direct observation of a bottleneck in electron cooling in wide GaAs quantum wells. Int...
We report the direct observation of a bottleneck in electron cooling in wide GaAs quantum wells. Int...
This thesis describes an optical study of the intersubband relaxation of carriers in GaAs multiple q...
Subband separation energy dependence of intersubband relaxation time in a wide quantum well (250 Ang...
We report a detailed analysis of the coupling between the polar longitudinal optical (LO) phonon an...
In the present work, we theoretically investigate the intersubband relaxation of electrons in quantu...
Excitonic processes involving LA, TA, and LO phonons are studied in quantum wells. We have derived e...
This thesis describes an optical study of the intersubband relaxation of carriers in GaAs multiple q...
The exciton population in a higher subband of GaAs quantum wells, below the free carrier continuum, ...
We investigate exciton–acoustic phonon interaction for both LA and TA phonons obtained from deformat...
Anti-Stokes Raman scattering has been used to investigate hot carrier dynamics in GaAs/AlGaAs quantu...