During the last four decades, a remarkable research effort has been made to understand the physical properties of Si:Er material, as it is considered to be a promising approach towards improving the optical properties of crystalline Si. In this paper, we present a summary of the most important results of that research. In the second part, we give a more detailed description of the properties of Si/Si:Er multinanolayer structures, which in many aspects represent the most advanced form of Er-doped crystalline Si with prospects for applications in Si photonics
Energy transfer to free carriers in an Auger process is well known to hamper emission of rare-earth ...
In this work, we present some approaches recently developed for enhancing light emission from Er-bas...
The electrical and optical properties of Er-implanted Si are shown to be critically dependent on the...
During the last four decades, a remarkable research effort has been made to understand the physical ...
Multilayer nanostructure devices, built with silicon crystals doped with rare-earth ions, open new p...
Among Er-doped crystalline Si materials, Si/Si:Er multi-nanolayer structures grown by sublimation mo...
The mechanisms of photo and electroluminescence from Er-implanted crystalline Si have been investiga...
The several processes required to achieve Er luminescence in Si are investigated. In particular, the...
Thesis (Ph.D.)--University of Rochester. Institute of Optics, 2012.In this thesis, Er doped SiO2/nc-...
The several processes required to achieve Er luminescence in Si are investigated. In particular, the...
We present here a study of Er doping of n+-type porous silicon. The samples were characterized in si...
We present here a study of Er doping of n +-type porous silicon. The samples were characterized in s...
The several processes required to achieve Er luminescence in Si are investigated. In particular, the...
The incorporation of Si-nc in Er doped silica is known to strongly enhance the infrared luminescence...
We present experimental evidence on the donor level related to optical properties of the Er3+ ion in...
Energy transfer to free carriers in an Auger process is well known to hamper emission of rare-earth ...
In this work, we present some approaches recently developed for enhancing light emission from Er-bas...
The electrical and optical properties of Er-implanted Si are shown to be critically dependent on the...
During the last four decades, a remarkable research effort has been made to understand the physical ...
Multilayer nanostructure devices, built with silicon crystals doped with rare-earth ions, open new p...
Among Er-doped crystalline Si materials, Si/Si:Er multi-nanolayer structures grown by sublimation mo...
The mechanisms of photo and electroluminescence from Er-implanted crystalline Si have been investiga...
The several processes required to achieve Er luminescence in Si are investigated. In particular, the...
Thesis (Ph.D.)--University of Rochester. Institute of Optics, 2012.In this thesis, Er doped SiO2/nc-...
The several processes required to achieve Er luminescence in Si are investigated. In particular, the...
We present here a study of Er doping of n+-type porous silicon. The samples were characterized in si...
We present here a study of Er doping of n +-type porous silicon. The samples were characterized in s...
The several processes required to achieve Er luminescence in Si are investigated. In particular, the...
The incorporation of Si-nc in Er doped silica is known to strongly enhance the infrared luminescence...
We present experimental evidence on the donor level related to optical properties of the Er3+ ion in...
Energy transfer to free carriers in an Auger process is well known to hamper emission of rare-earth ...
In this work, we present some approaches recently developed for enhancing light emission from Er-bas...
The electrical and optical properties of Er-implanted Si are shown to be critically dependent on the...