In Er-doped silicon we have found direct evidence for the formation of the Er-related intermediate state that is a precursor of the final 4f-electron excited state responsible for the 0.8 eV luminescence. Time-resolved photoluminescence following band-gap illumination shows disruption of this center by a THz pulse from a free-electron laser. The decay of the intermediate state could be directly monitored in this double-beam experiment and a lifetime of approximately 100 μs has been found. In this way the most characteristic step in the excitation mechanism of the Er ion in silicon has been revealed experimentally
A detailed investigation on the excitation and deexcitation processes of Er3+ in Si is reported. In ...
The structural and optical properties of erbium-doped silicon-rich silica samples containing 12 at. ...
7 pags.; 7 figs.The optical activation, excitation, and concentration limits of erbium in crystal Si...
In Er-doped silicon we have found direct evidence for the formation of the Er-related intermediate s...
We investigate the influence of infrared illumination using a free-electron laser on the photolumine...
Two-color optical spectroscopy is used to directly manipulate shallow levels available in Si:Er samp...
Exciton-mediated energy transfer model in Er-doped silicon was presented. The emission intensity is ...
The influence of intense infrared (IR) radiation in the range 7-17 μm on the photoluminescence (PL) ...
We demonstrate that excitation of Er3+ ions embedded in crystalline silicon is effectively quenched ...
We present experimental evidence on the donor level related to optical properties of the Er3+ ion in...
We present experimental evidence on the donor level related to optical properties of the Er3+ ion in...
We demonstrate that excitation of Er3+ ions embedded in crystalline silicon is effectively quenched ...
Influence of oxygen on optical activity and thermal stability of the 1.5 mu m emission of Er3+ ions ...
It is known that emission from Er ions implanted into a silicon wafer can be excited by illumination...
The several processes required to achieve Er luminescence in Si are investigated. In particular, the...
A detailed investigation on the excitation and deexcitation processes of Er3+ in Si is reported. In ...
The structural and optical properties of erbium-doped silicon-rich silica samples containing 12 at. ...
7 pags.; 7 figs.The optical activation, excitation, and concentration limits of erbium in crystal Si...
In Er-doped silicon we have found direct evidence for the formation of the Er-related intermediate s...
We investigate the influence of infrared illumination using a free-electron laser on the photolumine...
Two-color optical spectroscopy is used to directly manipulate shallow levels available in Si:Er samp...
Exciton-mediated energy transfer model in Er-doped silicon was presented. The emission intensity is ...
The influence of intense infrared (IR) radiation in the range 7-17 μm on the photoluminescence (PL) ...
We demonstrate that excitation of Er3+ ions embedded in crystalline silicon is effectively quenched ...
We present experimental evidence on the donor level related to optical properties of the Er3+ ion in...
We present experimental evidence on the donor level related to optical properties of the Er3+ ion in...
We demonstrate that excitation of Er3+ ions embedded in crystalline silicon is effectively quenched ...
Influence of oxygen on optical activity and thermal stability of the 1.5 mu m emission of Er3+ ions ...
It is known that emission from Er ions implanted into a silicon wafer can be excited by illumination...
The several processes required to achieve Er luminescence in Si are investigated. In particular, the...
A detailed investigation on the excitation and deexcitation processes of Er3+ in Si is reported. In ...
The structural and optical properties of erbium-doped silicon-rich silica samples containing 12 at. ...
7 pags.; 7 figs.The optical activation, excitation, and concentration limits of erbium in crystal Si...