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P-6 : Impact of buffer layers on the self-aligned top-gate a-IGZO TFT characteristics

Nag, M.
en de rest

Publication date

January 2015

DOI

10.1002/sdtp.10031

ISSN

0097-966X

Citation count (estimate)

3

Abstract

In this work we present the impact of buffer layers deposited by various techniques such as plasma enhanced chemical deposition (PECVD), physical vapor deposition (PVD) and atomic layer deposition (ALD) techniques on self-aligned (SA) top gate amorphous-Indium-Gallium-Zinc-Oxide (a-IGZO) TFT characteristics. Finally an optimized layer was integrated in TFT backplane on polyimide (PI) foil and a QQVGA AMOLED display is demonstrated

Extracted data

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Diesen-Tempelaars, Karin van
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Genoe, Jan
Dehaene, W
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Cobb, B.
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Obata, K.
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Schols, S.
Vicca, P.
Ke, Tung Huei
Smout, S.
Willegems, M.
Ameys, M.
Bhoolokam, A.
Kumar, A.
Van Der Steen, J.L.
Genoe, J.
Gelinck, G.H.
Heremans, P.

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