Add to ORKGScanning helium ion beam lithography is presented as a promising pattern definition technique for dense sub-10-nm structures. The powerful performance in terms of high resolution, high sensitivity, and a low proximity effect is demonstrated in a hydrogen silsesquioxane resist. © 2009 American Vacuum Society
The recently introduced helium ion microscope (HIM) is capable of imaging and fabrication of nanostr...
For the introduction of EUV lithography, development of high performance EUV resists is of key impor...
Isolated dots and lines with 6 nm width were written in 20 nm thick Hydrogen silsesquioxane (HSQ) la...
Scanning helium ion beam lithography is presented as a promising pattern definition technique for de...
Scanning helium ion beam lithography is presented as a promising pattern definition technique for de...
Recent developments show that Scanning Helium Ion Beam Lithography (SHIBL) with a sub-nanometer beam...
Advances in gas field ion source technology over the last decade have led to renewed interest in ion...
An emerging lithographic technique offers a promising alternative to electron beam lithography for f...
As nanoelectronic device design pushes towards ever smaller feature sizes, there is an increasing ne...
Dataset supporting: Shi, Xiaoqing et al (2016) Helium ion beam lithography on fullerene molecular r...
A scanning-helium-ion-beam microscope is now commercially available. This microscope can be used to ...
To explore the possibilities of the Orion plus helium ion microscope (HIM) as a nanofabrication tool...
The recently introduced helium ion microscope (HIM) is capable of imaging and fabrication of nanostr...
The recently introduced helium ion microscope (HIM) is capable of imaging and fabrication of nanostr...
The recently introduced helium ion microscope (HIM) is capable of imaging and fabrication of nanostr...
The recently introduced helium ion microscope (HIM) is capable of imaging and fabrication of nanostr...
For the introduction of EUV lithography, development of high performance EUV resists is of key impor...
Isolated dots and lines with 6 nm width were written in 20 nm thick Hydrogen silsesquioxane (HSQ) la...
Scanning helium ion beam lithography is presented as a promising pattern definition technique for de...
Scanning helium ion beam lithography is presented as a promising pattern definition technique for de...
Recent developments show that Scanning Helium Ion Beam Lithography (SHIBL) with a sub-nanometer beam...
Advances in gas field ion source technology over the last decade have led to renewed interest in ion...
An emerging lithographic technique offers a promising alternative to electron beam lithography for f...
As nanoelectronic device design pushes towards ever smaller feature sizes, there is an increasing ne...
Dataset supporting: Shi, Xiaoqing et al (2016) Helium ion beam lithography on fullerene molecular r...
A scanning-helium-ion-beam microscope is now commercially available. This microscope can be used to ...
To explore the possibilities of the Orion plus helium ion microscope (HIM) as a nanofabrication tool...
The recently introduced helium ion microscope (HIM) is capable of imaging and fabrication of nanostr...
The recently introduced helium ion microscope (HIM) is capable of imaging and fabrication of nanostr...
The recently introduced helium ion microscope (HIM) is capable of imaging and fabrication of nanostr...
The recently introduced helium ion microscope (HIM) is capable of imaging and fabrication of nanostr...
For the introduction of EUV lithography, development of high performance EUV resists is of key impor...
Isolated dots and lines with 6 nm width were written in 20 nm thick Hydrogen silsesquioxane (HSQ) la...